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Choong-Un Kim

Name

[Kim, Choong-Un]
  • Professor, Department of Materials Science & Engineering

Professional Preparation

    • 1993 PhD in Materials Science and EngineeringUniversity of California, Berkeley
    • 1987 MS in Metallurgical EngineeringSeoul National University, Korea
    • 1985 BS in Metallurgical EngineeringSeoul National University, Korea

Appointments

    • Sept 2009 to Aug 2012 Graduate Adivsor
      University of Texas Arlington   Materials Science and Engineering
    • Sept 2007 to Present Professor
      University of Texas Arlington   Materials Science and Engineering
    • Aug 2003 to Aug 2007 Assoc Prof
      University of Texas Arlington   Materials Science and Engineering
    • Aug 1996 to Aug 2002 Assist Professor
      University of Texas Arlington   Materials Science and Engineering

Memberships

  • Membership
    • May 2010 to Present IEEE
    • Apr 2002 to Present The Materials Society of AIME (TMS)

Awards and Honors

    • Feb  2007 Excellence in Research Award sponsored by Collage of Engineering, University of Texas at Arlington
    • Feb  2002 UTA College of Engineering Outstanding Young Faculty Member Award sponsored by Collage of Engineering, University of Texas at Arlington

Research and Expertise

  • THIN FILM METALLURGY
    A metalluragical understanding of thin film properties is our primary research concern here at UTA. We are attempting to examine the mechanisms that govern the behaviors of thin film materials by extending the conventional principles of metallurgy, namely phase transformation and thermodynamics. Currently two subjects are under investigation: electromigration in Cu and Al thin film conductors and contact formations between metals and semiconductors. Electromigration, i.e. diffusion impelled by high density currents, has been identified as one of the major sources for device failure. Our main interest in this area is to understand the influence of microstructural features on the electromigration mechanism, in particular, the effect of solute addition on the solvent electromigration. The main objective of the investigation on the contact information is to develop contact materials and processes that produce reliable contacts to semiconductor devices without any parasitic effect. Currently, we are focusing on the contact materials with duplex phases, i.e. semiconductor and metal phases. Experimental and theoretical studies are concurrently carried out to understand the mechanism and kinetics of phase transformations, interface reactions, and diffusion.
  • RELIABILITY PHYSICS AND MATERIALS CHARACTERIZATION
    Modern devices, especially microelectronics devices, are prone to failures because they are being subjected to increasingly severe service conditions. Failure mechanisms in these microelectronic devices may be analysed using various characterization tools, including transmission and scanning electron microscopy. The failure mechanism and its relationship to the materials should be identified in order to prevent the failure. Research in this area includes the study of electromigration failure at via, deformation defects in metallization layer, and degradation of inter-dielectric materials, as well as studies on the reliability of packaging system wher solder joints are the essential part of the assembly.
  • EXPERTISE
    Reliability Physics of Microelectronic Devices: metallization & low-k Thin film physics, atomic diffusion, instability, and quantum phenomena Materials synthesis and characterization, including phase diagram, HRTEM
  • Synthesis of Semiconductor Nano-dots
    Objective: Design and develop functional materials with high-density semiconductor nano-dots Strategic Areas: Interconnect technology and Characterization method in nanoscale Potential Collaborators A. Weiss: physics A. Koyman: Physics R. Elsenbaumer: Chemistry W. Kirk: EE Description: Interconnect materials used microelectronics devices are nothing but nano (Cu, dielectric, lithography). Better understanding of physics, reliability, and processing is needed. Structural, electrical, and chemical characterization of nano material is challenging issue. Microscopy and spectroscopic technique will be pursued.

Publications

      Conference Proceeding 2013
      • H. Xu, C.-U. Kim, and T. K. Lee, "Isothermal Shear Fatigue Mechanism of Lead Free Solder Joints", 60th ECTC, pp1299-1303
        {Conference Proceeding} [Refereed/Juried]

      Journal Article 2013
      • E. Zin, W. H. Bang, E. T. Ryan, S. King, and C. -U. Kim, "Study of Viscoplastic Deformation in Porous Organosilicate Thin Films for Ultra Low-k Applications", Appl. Phys. Lett. 102, 221909 (2013) 

        {Journal Article} [Refereed/Juried]

      Conference Proceeding 2012
      • H. Xu, C.-U. Kim, T. K. Lee, ""Isothermal Shear Fatigue Mechanism of Lead Free Solder Joints", 60th ECTC, pp1299-1303 (2012).
        {Conference Proceeding} [Refereed/Juried]
      2012
      • H. Xu, C.-U. Kim, and T.-K. Lee, "Sensitivity of Grain Structure and Fatigue Reliability of Pb-Free Solder Jointon the Position in PBGA Packaging Assembly", 60th ECTC, pp 500-504
        {Conference Proceeding} [Refereed/Juried]

      Journal Article 2012
      • J. S. G., C.U. Kim, W. P. Kirk, "Observations of Lattice Strain Decay Mechanisms in the Quantum-Dot Region of Epitaxially Grown p-i-n Photovoltaic Structures", JVST-B
        {Journal Article} [Refereed/Juried]
      2012
      • J. S. Gandhi, C.-U. Kim,  and W. P. Kirk, "Misfit Management for Reduced Dislocation Formation in Epitaxial Quantum-Dot-Based Devices", J. of Crystal Growth (accepted)  
        {Journal Article} [Refereed/Juried]

      Book 2011
      • C. -U. Kim, "Electromigration in thin films and electronic devices", Woodhead Publishing Co, Cambridge, UK, 2011
        {Book} [Non-refereed/non-juried]

      Journal Article 2011
      • C.U. Kim, L.-S. Chen, N. Michael, W. H. Bang, J.-Y. Park, T. E. Ryan, and S. King, "Development of Voltammetry-based techniques for characterization of porous low-k/Cu interconnect integration reliability", ECS Trans. Vol. 35, 757-2011
        {Journal Article} [Refereed/Juried]

      Conference Proceeding 2010
      • W. H. B. Xu, T. K. L. Ma, K. C. Liu, and C. U. Kim. "Fracture Mechanics of Lead-Free Solder Joints under Cyclic Shear Load," in 60th Electronic Component Technology Conference (Las Vegas, NV, 2010), pp. 484.
        {Conference Proceeding} [Refereed/Juried]

      Journal Article 2010
      • Chen, W. H. B.; Kim, Y. J. P. Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects. Applied Physics Letters 2010, 96, 091903.
        {Journal Article} [Refereed/Juried]

      Conference Proceeding 2009
      • L. S. Chen, Y. J. Park, T. Ryan, S. King, and C. U. Kim. "Cu out-diffusion induced leakage current instability in Cu/porous low-k interconnects," in TECHCON (Texas, Austin, 2009), pp. 12-2.
        {Conference Proceeding} [Refereed/Juried]
      2009
      • N. M. Zin, K. H. O. Kang, J. S. C. Chul, T. T. Moon, and C. U. Kim. "Mechanism of Electromigration in Au/Al wirebond and its effects," in 59th Electronic Component Technology Conference (San Diego, 2009), pp. P341.
        {Conference Proceeding} [Refereed/Juried]
      2009
      • W. Ho, L. S. C. Bang, T. K. L. Kim, and K. C. Liu. "Rate Dependence of Bending Fatigue Failure Characteristics of Lead-Free solder," in 59th Electronic Component Technology Conference (San Diego, 2009), pp. P561.
        {Conference Proceeding} [Refereed/Juried]

      Journal Article 2009
      • Bang, C. U. K.; Kang, S. H.; Oh, K. H. Fracture Mechanics of Solder Bumps during Ball Shear Testing: Effect of Bump Size. Journal of Electronic Materials 2009, 38, 1896.
        {Journal Article} [Refereed/Juried]
      2009
      • Bedekar, N. P.; Rong, J. P. L.; Kim, C. U.; Priya, S. Improved magnetoelectric properties of piezoelectric–magnetostrictive nanocomposites synthesized using high-pressure compaction technique. Journal Materials Science 2009, 44, 2162-2166.
        {Journal Article} [Refereed/Juried]

      Conference Proceeding 2008
      • Chen, W. H. B., Kim, S. H. K., & Oh, K. (2008). Mechanism of Thermal Instability of pores in porous low-k dielectrics. In TECHCON (pp. 124). Austin: SRC.
        {Conference Proceeding} [Refereed/Juried]

      Journal Article 2008
      • N. L. M. Meng, Y. J. Park, and C. U. Kim. "Analysis of Barrier Defect in Low-k/Cu Interconnects based on Electrochemical Response and Simulation Cell," J. Electron. Mater., vol. 37, pp. 429-438, 2008.
        {Journal Article} [Refereed/Juried]
      2008
      • R. S. Ray, C. U. K. Bhadrachalam, and S. J. Koh. "CMOS compatible fabrication of room temperature single electron transistor," Nature-Nanotechnology, vol. 3, pp. 603, 2008.
        {Journal Article} [Refereed/Juried]

      Conference Proceeding 2007
      • Chen, W. H. B., Michael, Y. J. P., & Matz, C. U. K. (2007). Trapped impurities in low-k dielectrics and their characterization method. In TECHCON (pp. 154). Austin: SRC.
        {Conference Proceeding} [Refereed/Juried]

      Journal Article 2007
      • R. S. Ma, V. R. Huang, C. U. Kim, and S. J. Koh. "Electrostatic Funneling for Precise Nanoparticle Placement: A Route to Wafer-Scale Integration," NanoLetters, vol. 7, pp. 439, 2007.
        {Journal Article} [Refereed/Juried]

      Journal Article 2006
      • N. M. Meng, C. U. Kim, and Y. J. Park. "Study of Pore Structure and Stability in Porous Low-k Interconnects using Electrolyte Voltammetry," Applied Physics Letters, vol. 88, pp. 261911, 2006.
        {Journal Article} [Refereed/Juried]

      Journal Article 2005
      • C. U. K. Shoemaker and M. C. Vogt. "CO2 sensing mechanism of electrocatalytic sensor based on a W-stabilized Bi oxide solid electrolyte and cyclic voltammetry measurement techniques," Sensors and Actuators B, vol. 110, pp. 89-100, 2005.
        {Journal Article} [Refereed/Juried]

      Journal Article 2004
      • Michael, C. U. K.; Jiang, R. A.; Gillespie, P. Mechanism of Electromigration failure in submicron Cu interconnects. Journal of Electronic Materials 2004, 31, 1004.
        {Journal Article} [Refereed/Juried]

      Journal Article 2003
      • Kim, J. Y. P.; Michael, P. G.; Augur, R. Study of electron scattering mechanism in nanoscale Cu interconnects. Journal of Electronic Materials 2003, 32, 982.
        {Journal Article} [Refereed/Juried]
      2003
      • Michael, C. U. K.; Jiang, R. A.; Gillespie, P. Mechanism of electromigration in ultra-fine Cu interconnects. Journal of Electronic Materials 2003, 32, 1.
        {Journal Article} [Refereed/Juried]
      2003
      • Park, R. K.; Kim, T. C.; Dunford, S.; Puligandla, V. Influence of Au addition on the phase equilibria of near Eutectic Sn-3.8Ag-0.7Cu Pb-free solder alloys. Journal of Electronic Materials 2003, 32, 1474.
        {Journal Article} [Refereed/Juried]
      2003
      • Lee, M. J.; Kim, C. U. Formation of HgTe Nano-disks embedded in PbTe matrix by precipitation phenomena. Nano Letters 2003, 3, 1607.
        {Journal Article} [Refereed/Juried]
      2003
      • Park, C. U. K.; Carper, T.; Puligandla, V. Phase equilibrium studies of Sn-Ag-Cu eutectic solders using differential cooling of Sn-3.8Ag-0.7Cu Alloys. Journal of Electronic Materials 2003, 32, 1297.
        {Journal Article} [Refereed/Juried]
      2003
      • D. P. B. Yildiz, Z. Celik-Butler, and C. U. Kim. "Crystallization and Pyroelectric Effect of Semiconducting YbaCuO Thin Films Deposited at Different Temperatures," J. Vac. Sci. and Technol. B, vol. 1, 2003.
        {Journal Article} [Refereed/Juried]

      Journal Article 2002
      • Aildiz, Z. C. B.; Butler, D. P.; Kim, C. U. The investigation of high temperature coefficient of resistance and crystallization of semiconducting YBaCuO thin films through pulsed laser annealing. Journal of Vacuum Science and Technology 2002, B20, 548.
        {Journal Article} [Refereed/Juried]
      2002
      • Le, L. T.; Tso, N. C.; Kim, C. U. An analysis of the reservoir length and its effect on electromigration lifetime. Journal of Materials Research 2002, 17, 167.
        {Journal Article} [Refereed/Juried]

      Journal Article 2001
      • Kim, C. U. Investigation on self-aligned HgTe nanocrystals induced by controlled precipitation in PbTe-HgTe quasi-binary compound semiconductor alloys. Physic B 2001, 304, 267.
        {Journal Article} [Refereed/Juried]
      2001
      • Park, C. W. Y.; Ha, C. U. K.; Kwon, S. B. J.; Kang, C. S. Investigation of interfacial reaction between Sn-Ag eutectic solder and Au/Ni/Cu/Ti thin film metallization. Journal of Electronic Materials 2001, 9, 1165.
        {Journal Article} [Refereed/Juried]
      2001
      • Michael, N.; Kim, C. U. Electromigration in Cu thin films with Sn and Al cross strips. Journal of Applied Physics 2001, 90, 4370.
        {Journal Article} [Refereed/Juried]
      2001
      • Kim, N. M.; Jiang, Q. T. Efficient electromigration testing with a single current source. Review of Scientific Instruments 2001, 72, 3962.
        {Journal Article} [Refereed/Juried]

      Journal Article 1999
      • Yoon, H. M. L.; Kim, C. U.; Lee, B. J. Investigation of the phase equilibria in the Sn-Bi-In alloy system. Metallurgical Transaction 1999, 30A, 1503.
        {Journal Article} [Refereed/Juried]

      Journal Article 1998
      • Le, N. C. T.; Rost, C. K. Influence of W via on the mechanism of electromigration failure in Al-0.5 Cu interconnects. Applied Physics Letters 1998, 72, 2814.
        {Journal Article} [Refereed/Juried]

      Journal Article 1997
      • Kim, J. W. M., Jr.; Lee, H. M. The kinetics of electromigration-induced edge drift in Al-Cu thin film interconnects. Journal of Applied Physics 1997, 82, 1592.
        {Journal Article} [Refereed/Juried]

      Journal Article 1996
      • Morris, J.; Kim, C. U.; Kang, S. H. The metallurgical control of electromigration failure in narrow conducting lines. Journal of Metals 1996, 48, 43.
        {Journal Article} [Refereed/Juried]
      1996
      • Kang, C. U. K.; Morris, J.; Genin, F. Effect of post-patterning annealing on the grain structure and reliability of Al based interconnects. Journal of Applied Physics 1996, 79, 8330.
        {Journal Article} [Refereed/Juried]
      1996
      • Kim, S. H. K.; Morris, J. Effect of current reversal on the Failure mechanism of Al-Cu-Si narrow interconnects. Journal of Electronic Materials 1996, 25, 293.
        {Journal Article} [Refereed/Juried]

      Journal Article 1994
      • Kim, S. I. S.; Morris, J. The Influence of Microstructure on the Resistivity of Al-Cu-Si Thin Film Interconnects. Journal of Applied Physics 1994, 75, 879.
        {Journal Article} [Refereed/Juried]

      Journal Article 1993
      • Kim, U.; Morris, J. The mechanism of electromigration failure of narrow Al-2Cu-1Si thin film interconnects. Journal of Applied Physics 1993, 73, 4885.
        {Journal Article} [Refereed/Juried]

      Journal Article 1992
      • Kim, C. U.; Morris, J. "The influence of Cu precipitation on electromigration failure in Al-Cu-Si. Journal of Applied Physics 1992, 72, 1837.
        {Journal Article} [Refereed/Juried]

Courses

      • MSE 5304-001 Materials Analysis

        This course consists of two parts, lecture and laboratory.  The lecture part of the class discusses theories behind materials characterization. The discussion includes the theories behind X-ray diffraction techniques, electron microscopy and spectroscopic techniques, thermal analysis techniques, and optical spectroscopic techniques.  The laboratory part of class is designed to provide students with hand-on experiences associated with various characterization techniques, including two x-ray diffractometry methods, SEM/EDX/Auger, and optical spectroscopic techniques.

        Fall - Regular Academic Session - 2016 Download Syllabus Contact info & Office Hours
      • MSE 4390-003 Materials Analysis

        This course consists of two parts, lecture and laboratory.  The lecture part of the class discusses theories behind materials characterization. The discussion includes the theories behind X-ray diffraction techniques, electron microscopy and spectroscopic techniques, thermal analysis techniques, and optical spectroscopic techniques.  The laboratory part of class is designed to provide students with hand-on experiences associated with various characterization techniques, including two x-ray diffractometry methods, SEM/EDX/Auger, and optical spectroscopic techniques.

        Fall - Regular Academic Session - 2016 Download Syllabus Contact info & Office Hours
      • MSE 5339-001 FAILURE ANALYSIS

        The basic scope of this course is to understand 1) various types of failure modes in engineering materials and devices, 2) contributing factors to those failures 3) analysis and detection methods employed in the relevant industries, and 4) engineering methods of preventing such modes. The failure of engineering materials under discussion includes those by mechanical, electrical and chemical load. Specific cases of discussion include materials for structural as well as microelectronics applications. Also discussed will be the method of statistical analysis and its modeling.

        Fall - Regular Academic Session - 2016 Download Syllabus Contact info & Office Hours
      • MSE 4338-001 FAILURE ANALYSIS

        The basic scope of this course is to understand 1) various types of failure modes in engineering materials and devices, 2) contributing factors to those failures 3) analysis and detection methods employed in the relevant industries, and 4) engineering methods of preventing such modes. The failure of engineering materials under discussion includes those by mechanical, electrical and chemical load. Specific cases of discussion include materials for structural as well as microelectronics applications. Also discussed will be the method of statistical analysis and its modeling.

        Fall - Regular Academic Session - 2016 Download Syllabus Contact info & Office Hours
      • MSE 5312-001 Mechanical Behavior of Materials

        This course describes the mechanical properties of materials with weighted emphasis on plasticity and strengthening mechanism.  Also discussed will include the solid state defects and their role in making materials mechanical properties, including plastic deformation and fracture resistance, to be changed.  

        Spring - Regular Academic Session - 2015 Download Syllabus Contact info & Office Hours
      • MSE 5304-001 Materials Analysis

        This course teaches principles behind a number of common characterization techniques of engineering materials

        Fall - Regular Academic Session - 2014 Download Syllabus Contact info & Office Hours
      • MSE 5339-001 Failure analysis and Reliability Engineering

        This course discusses following subjects: common failure mechanisms in engineering materials including fracture, corrosion and reaction; statistical analysis and modeling of such failure mechanisms.

        Fall - Regular Academic Session - 2014 Download Syllabus Contact info & Office Hours
      • MSE 5304-001 Materials Analysis

        This course consists of two parts, lecture and laboratory.  The lecture part of the class discusses theories behind materials characterization. The discussion includes the theories behind X-ray diffraction techniques, electron microscopy and spectroscopic techniques, thermal analysis techniques, and optical
        spectroscopic techniques.  The laboratory part of class is designed to provide students with hand-on experiences associated with various characterization techniques, including two x-ray diffractometry methods, SEM/EDX/Auger, and optical spectroscopic techniques.     

        Fall - Regular Academic Session - 2013 Download Syllabus Contact info & Office Hours
      • MSE 5341-001 Transmission Electron Microscopy

        Understanding of basic principles behind the
        transmission electron microscopy and the advanced analysis and gaining the
        first level operation experience. Discussion includes the kinematical and the
        dynamical diffraction theory as well as other fundamentals for TEM operation.