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Diana Huffaker

[Diana Huffaker]

Professor, Electrical Engineering
Last Updated: September 22, 2021
about me

Biography

Biography

Professor Diana Huffaker is the Electrical Engineering Department Chair at the University of Texas at Arlington. She maintains Adjunct Professor of Electrical Engineering at the University of California at Los Angeles (UCLA) where she directs the Integrated NanoMaterials Laboratory User Facility with the California Nanosystems Institute (CNSI). Before joining UTA, she directed the Institute for Compound Semiconductors (ICS) at Cardiff University where she held the Welsh Government Sêr Cymru Chair in Advanced Materials and Engineering. Professor Huffaker has co-authored over 250 refereed journal publications with more than 11K citations (h-index =54) and many invited presentations world-wide. Her research interests include nanostructured materials, quantum technologies, plasmonics and metamaterials. Her active projects include 3D nanolasers, quantum emitters, advanced photodetectors. She is a Fellow of IEEE, OSA, National Security and Science Engineering Faculty (NSSEFF) and the Humboldt Society along with Photonics Society Distinguished Lecturer. She is an active participant in the technical community with leadership roles in many international societies including IEEE, OSA, MRS, SPIE, Women in Science, select local and national community programs.

Support & Funding

Support & Funding

This data is entered manually by the author of the profile and may duplicate data in the Sponsored Projects section.
    • Apr 2021 to Apr 2022 Wafer-Scale Electron-Beam Lithography System For Advanced Nanophotonics Research and Education sponsored by  -  $578975
      (Funded)

Publications


      2020
      • Journal Article
        Enhanced Optical Emission from 2D InSe Bent onto Si-Pillars
        [Mazumder, Debarati, Xie, Jiahao, Kudrynskyi, ZakharR., Wang, Xinjiang, Makarovsky, Oleg, Bhuiyan, MahabubA., Kim, Hyunseok, Chang, Ting-Yuan, Huffaker, DianaL., Kovalyuk, ZakharD., Zhang, Lijun, Patane, Amalia]. 8(18), DOI: http://dx.doi.org/10.1002/adom.202000828
      • Journal Article
        High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer
        [Huang, Jianliang, Zhao, Chengcheng, Nie, Biying, Xie, Shiyu, Kwan, Dominic C. M., Meng, Xiao, Zhang, Yanhua, Huffaker, DianaL., Ma, Wenquan]. 8(5), 755-759. DOI: http://dx.doi.org/10.1364/PRJ.385177
      • Journal Article
        Hybrid Integrated Photomedical Devices for Wearable Vital Sign Tracking
        [Bae, Sang-Hoon, Kim, Donghyuk, Chang, Sheng-Yung, Hur, Janet, Kim, Hyunseok, Lee, Jin-Wook, Zhu, Bowen, Han, Tae-Hee, Choi, Chanyeol, Huffaker, DianaL., Di Carlo, Dino, Yang, Yang, Rim, YouSeung]. ACS Sensors. 5(6), 1582-1588. DOI: http://dx.doi.org/10.1021/acssensors.9b02529
      • Journal Article
        Orientation-Controlled Selective-Area Epitaxy of III-V Nanowires on (001) Silicon for Silicon Photonics
        [Chang, Ting-Yuan, Kim, Hyunseok, Zutter, BrianT., Lee, Wook-Jae, Regan, BrianC., Huffaker, DianaL.]. Advanced Functional Materials. 30(30), DOI: http://dx.doi.org/10.1002/adfm.202002220
      • Journal Article
        Room-Temperature Quantum Emitter in Aluminum Nitride
        [Bishop, SamG., Hadden, JohnP., Alzahrani, FarisD., Hekmati, Reza, Huffaker, DianaL., Langbein, WolfgangW., Bennett, AnthonyJ.]. 7(7), 1636-1641. DOI: http://dx.doi.org/10.1021/acsphotonics.0c00528
      • Journal Article
        Simultaneous Optical and Electrical Characterization of GaN Nanowire Arrays by Means of Vis-IR Spectroscopic Ellipsometry
        [Santos, AntonioJ., Lacroix, Bertrand, Blanco, Eduardo, Hurand, Simon, Gomez, VictorJ., Paumier, Fabien, Girardeau, Thierry, Huffaker, DianaL., Garcia, Rafael, Morales, FranciscoM.]. Journal of Physical Chemistry C. 124(2), 1535-1543. DOI: http://dx.doi.org/10.1021/acs.jpcc.9b10556
      • Journal Article
        Topological Insulator Laser Using Valley-Hall Photonic Crystals
        [Gong, Yongkang, Wong, Stephan, Bennett, AnthonyJ., Huffaker, DianaL., Oh, SangSoon]. 7(8), 2089-2097. DOI: http://dx.doi.org/10.1021/acsphotonics.0c00521

      2019
      • Journal Article
        Energy-Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X-Ray and Gamma-Ray Detection
        [Juang, Bor-Chau, Chen, Andrew, Ren, Dingkun, Liang, Baolai, Prout, DavidL., Chatziioannou, ArionF., Huffaker, DianaL.]. 7(11), DOI: http://dx.doi.org/10.1002/adom.201900107
      • Journal Article
        Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes
        [Yi, Xin, Xie, Shiyu, Liang, Baolai, Lim, LehW., Cheong, JengS., Debnath, MukulC., Huffaker, DianaL., Tan, CheeH., David, John P. R.]. Nature Photonics. 13(10), 683-+. DOI: http://dx.doi.org/10.1038/s41566-019-0477-4
      • Journal Article
        Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions
        [Ren, Dingkun, Rong, Zixuan, Azizur-Rahman, KhalifaM., Somasundaram, Siddharth, Shahilil, Mohammad, Huffaker, DianaL.]. Nanotechnology. 30(4), DOI: http://dx.doi.org/10.1088/1361-6528/aaed5c
      • Journal Article
        Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection
        [Delmas, M., Kwan, D. C. M., Debnath, M.C., Liang, B.L., Huffaker, D.L.]. Journal of Physics D: Applied Physics. 52(47), DOI: http://dx.doi.org/10.1088/1361-6463/ab3b6a
      • Journal Article
        High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays
        [Ren, Dingkun, Rong, Zixuan, Kim, Hyunseok, Turan, Deniz, Huffaker, DianaL.]. Optics Letters. 44(19), 4666-4669. DOI: http://dx.doi.org/10.1364/OL.44.004666
      • Journal Article
        III-V nanowire array telecom lasers on (001) silicon-on-insulator photonic platforms
        [Kim, Hyunseok, Chang, Ting-Yuan, Lee, Wook-Jae, Huffaker, DianaL.]. Applied Physics Letters. 115(21), DOI: http://dx.doi.org/10.1063/1.5126721
      • Journal Article
        InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode
        [Farrell, AlanC., Meng, Xiao, Ren, Dingkun, Kim, Hyunseok, Senanayake, Pradeep, Hsieh, NickY., Rong, Zixuan, Chang, Ting-Yuan, Azizur-Rahman, KhalifaM., Huffaker, DianaL.]. Nano Letters. 19(1), 582-590. DOI: http://dx.doi.org/10.1021/acs.nanolett.8b04643
      • Journal Article
        Porosity Control for Plasma-Assisted Molecular Beam Epitaxy of GaN Nanowires
        [Gomez, VictorJ., Santos, AntonioJ., Blanco, Eduardo, Lacroix, Bertrand, Garcia, Rafael, Huffaker, DianaL., Morales, FranciscoM.]. Crystal Growth & Design. 19(4), 2461-2469. DOI: http://dx.doi.org/10.1021/acs.cgd.9b00146
      • Journal Article
        Room-Temperature InGaAs Nanowire Array Band-Edge Lasers on Patterned Silicon-on-Insulator Platforms
        [Kim, Hyunseok, Lee, Wook-Jae, Chang, Ting-Yuan, Huffaker, DianaL.]. 13(3), DOI: http://dx.doi.org/10.1002/pssr.201800489
      • Journal Article
        Room-Temperature Midwavelength Infrared InAsSb Nanowire Photodetector Arrays with Al2O3 Passivation
        [Ren, Dingkun, Azizur-Rahman, KhalifaM., Rong, Zixuan, Juang, Bor-Chau, Somasundaram, Siddharth, Shahili, Mohammad, Farrell, AlanC., Williams, BenjaminS., Huffaker, DianaL.]. Nano Letters. 19(5), 2793-2802. DOI: http://dx.doi.org/10.1021/acs.nanolett.8b04420
      • Journal Article
        Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation
        [Chen, Andrew, Juang, Bor-Chau, Ren, Dingkun, Liang, Baolai, Prout, DavidL., Chatziioannou, ArionE., Huffaker, DianaL.]. Japanese Journal of Applied Physics. 58(9), DOI: http://dx.doi.org/10.7567/1347-4065/ab3909

      2018
      • Journal Article
        A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires
        [Ren, Dingkun, Rong, Zixuan, Somasundaram, Siddharth, Azizur-Rahman, KhalifaM., Liang, Baolai, Huffaker, DianaL.]. Nanotechnology. 29(50), DOI: http://dx.doi.org/10.1088/1361-6528/aae365
      • Journal Article
        Abnormal photoluminescence for GaAs/Al0.2Ga0.8As quantum dot-ring hybrid nanostructure grown by droplet epitaxy
        [Su, Linlin, Liang, Baolai, Wang, Ying, Yuan, Qing, Guo, Qinglin, Wang, Shufang, Fu, Guangsheng, Huffaker, DianaL., Mazur, YuriyI., Ware, MorganE., Maidaniuk, Yurii, Salamo, GregoryJ.]. Journal of Luminescence. 195, 187-192. DOI: http://dx.doi.org/10.1016/j.jlumin.2017.11.008
      • Journal Article
        Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 2.5 mu m
        [Ren, Dingkun, Farrell, AlanC., Huffaker, DianaL.]. 8(4), 1075-1081. DOI: http://dx.doi.org/10.1364/OME.8.001075
      • Journal Article
        Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots
        [Wang, Ying, Sheng, Xinzhi, Yuan, Qing, Guo, Qinglin, Wang, Shufang, Fu, Guangsheng, Liang, Baolai, Huffaker, DianaL., Mazur, Yuriy, I, Maidaniuk, Yurii, Ware, MorganE., Salamo, GregoryJ.]. Journal of Luminescence. 202, 20-26. DOI: http://dx.doi.org/10.1016/j.jlumin.2018.05.029
      • Journal Article
        Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium
        [Kim, Hyunseok, Ren, Dingkun, Farrell, AlanC., Huffaker, DianaL.]. Nanotechnology. 29(8), DOI: http://dx.doi.org/10.1088/1361-6528/aaa52e
      • Journal Article
        Demonstration of large ionization coefficient ratio in AlA(s0.56)Sb(0.44) lattice matched to InP
        [Yi, Xin, Xie, Shiyu, Liang, Baolai, Lim, LehWoon, Zhou, Xinxin, Debnath, MukulC., Huffaker, DianaL., Tan, CheeHing, David, John. P. R.]. Scientific Reports. 8, DOI: http://dx.doi.org/10.1038/s41598-018-27507-w
      • Journal Article
        Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model
        [Ren, Dingkun, Scofield, AdamC., Farrell, AlanC., Rong, Zixuan, Haddad, MichaelA., Laghumavarapu, RameshB., Liang, Baolai, Huffaker, DianaL.]. Nanoscale. 10(16), 7792-7802. DOI: http://dx.doi.org/10.1039/c8nr01908h
      • Journal Article
        Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy
        [Schuck, ChristopherF., McCown, RobinA., Hush, Ashlie, Mello, Austin, Roy, Simon, Spinuzzi, JosephW., Liang, Baolai, Huffaker, DianaL., Simmonds, PaulJ.]. 36(3), DOI: http://dx.doi.org/10.1116/1.5018002
      • Journal Article
        Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p-n Heterojunctions
        [Ren, Dingkun, Meng, Xiao, Rong, Zixuan, Cao, Minh, Farrell, AlanC., Somasundaram, Siddharth, Azizur-Rahman, KhalifaM., Williams, BenjaminS., Huffaker, DianaL.]. Nano Letters. 18(12), 7901-7908. DOI: http://dx.doi.org/10.1021/acs.nanolett.8b03775

      2017
      • Journal Article
        Absorption dynamics of type-II GaSb/GaAs quantum dots
        [Komolibus, K., Piwonski, T., Reyner, C.J., Liang, B., Huyet, G., Huffaker, D.L., Viktorov, E.A., Houlihan, J.]. 7(4), 1424-1430. DOI: http://dx.doi.org/10.1364/OME.7.001424
      • Journal Article
        Absorption dynamics of type-II GaSb/GaAs quantum dots
        [Komolibus, K., Piwonski, T., Reyner, C.J., Liang, B., Huyet, G., Huffaker, D.L., Viktorov, E.A., Houlihan, J.]. 7(4), 1424-1430. DOI: http://dx.doi.org/10.1364/OME.7.001424
      • Journal Article
        Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy
        [Ma, Y.J., Zhang, Y.G., Gu, Y., Xi, S.P., Chen, X.Y., Liang, Baolai, Juang, Bor-Chau, Huffaker, DianaL., Du, B., Shao, X.M., Fang, J.X.]. AIP Advances. 7(7), DOI: http://dx.doi.org/10.1063/1.4989884
      • Journal Article
        Diode Characteristics Approaching Bulk Limits in GaAs Nanowire Array Photodetectors
        [Farrell, AlanC., Senanayake, Pradeep, Meng, Xiao, Hsieh, NickY., Huffaker, DianaL.]. Nano Letters. 17(4), 2420-2425. DOI: http://dx.doi.org/10.1021/acs.nanolett.7b00024
      • Journal Article
        Enhanced Carrier Multiplication in InAs Quantum Dots for Bulk Avalanche Photodetector Applications
        [Ma, Ying-Jie, Zhang, Yong-Gang, Gu, Yi, Chen, Xing-You, Wang, Peng, Juang, Bor-Chau, Farrell, Alan, Liang, Bao-Lai, Huffaker, DianaL., Shi, Yan-Hui, Ji, Wan-Yan, Du, Ben, Xi, Su-Ping, Tang, Heng-Jing, Fang, Jia-Xiong]. 5(9), DOI: http://dx.doi.org/10.1002/adom.201601023
      • Journal Article
        GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell
        [Nelson, GeorgeT., Juang, Bor-Chau, Slocum, MichaelA., Bittner, ZacharyS., Laghumavarapu, RameshB., Huffaker, DianaL., Hubbard, SethM.]. Applied Physics Letters. 111(23), DOI: http://dx.doi.org/10.1063/1.4991548
      • Journal Article
        Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature
        [Kim, Hyunseok, Lee, Wook-Jae, Farrell, AlanC., Morales, Juan S. D., Senanayake, Pradeep, Prikhodko, SergeyV., Ochalski, TomaszJ., Huffaker, DianaL.]. Nano Letters. 17(6), 3465-3470. DOI: http://dx.doi.org/10.1021/acs.nanolett.7b00384
      • Journal Article
        Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb
        [Juang, Bor-Chau, Liang, Baolai, Ren, Dingkun, Prout, DavidL., Chatziioannou, ArionF., Huffaker, DianaL.]. Crystals. 7(10), DOI: http://dx.doi.org/10.3390/cryst7100313
      • Journal Article
        Optical characterization of type-I to type-II band alignment transition in GaAs/AlxGa1-xAs quantum rings grown by droplet epitaxy
        [Su, Linlin, Wang, Ying, Guo, Qinglin, Li, Xiaowei, Wang, Shufang, Fu, Guangsheng, Mazur, YuriyI., Ware, MorganE., Salamo, GregoryJ., Liang, Baolai, Huffaker, DianaL.]. Journal of Physics D: Applied Physics. 50(32), DOI: http://dx.doi.org/10.1088/1361-6463/aa7b04
      • Journal Article
        Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44 matrix for use in intermediate band solar cells
        [Debnath, MukulC., Liang, Baolai, Laghumavarapu, RameshB., Wang, Guodong, Das, Aparna, Juang, Bor-Chau, Huffaker, DianaL.]. Journal of Applied Physics. 121(21), DOI: http://dx.doi.org/10.1063/1.4984832
      • Journal Article
        Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
        [Wang, Ying, Sheng, Xinzhi, Guo, Qinglin, Li, Xiaoli, Wang, Shufang, Fu, Guangsheng, Mazur, YuriyI., Maidaniuk, Yurii, Ware, MorganE., Salamo, GregoryJ., Liang, Baolai, Huffaker, DianaL.]. Nanoscale Research Letters. 12, DOI: http://dx.doi.org/10.1186/s11671-017-1998-8
      • Journal Article
        Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates
        [Ren, Dingkun, Farrell, AlanC., Williams, BenjaminS., Huffaker, DianaL.]. Nanoscale. 9(24), 8220-8228. DOI: http://dx.doi.org/10.1039/c7nr00948h
      • Journal Article
        Selective-area InAsSb Nanowires on InP for 3 - 5 mu m Mid-wavelength Infrared Optoelectronics
        [Ren, Dingkun, Farrell, AlanC., Huffaker, DianaL.]. MRS Advances. 2(58-59), 3565-3570. DOI: http://dx.doi.org/10.1557/adv.2017.365
      • Journal Article
        Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator
        [Kim, Hyunseok, Lee, Wook-Jae, Farrell, AlanC., Balgarkashi, Akshay, Huffaker, DianaL.]. Nano Letters. 17(9), 5244-5250. DOI: http://dx.doi.org/10.1021/acs.nanolett.7b01360
      • Journal Article
        Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator
        [Lee, Wook-Jae, Kim, Hyunseok, You, Jong-Bum, Huffaker, DianaL.]. Scientific Reports. 7, DOI: http://dx.doi.org/10.1038/s41598-017-10031-8

      2016
      • Journal Article
        Characterization of GaSb photodiode for gamma-ray detection
        [Juang, Bor-Chau, Prout, DavidL., Liang, Baolai, Chatziioannou, ArionF., Huffaker, DianaL.]. Applied Physics Express. 9(8), DOI: http://dx.doi.org/10.7567/APEX.9.086401
      • Journal Article
        Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots
        [Wang, Guodong, Liang, Baolai, Juang, Bor-Chau, Das, Aparna, Debnath, MukulC., Huffaker, DianaL., Mazur, YuriyI., Ware, MorganE., Salamo, GregoryJ.]. Nanotechnology. 27(46), DOI: http://dx.doi.org/10.1088/0957-4484/27/46/465701
      • Journal Article
        Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures
        [Couto, O. D. D., Jr., de Almeida, P. T., dos Santos, G. E., Balanta, M. A. G., Andriolo, H.F., Brum, J.A., Brasil, M. J. S. P., Iikawa, F., Liang, B.L., Huffaker, D.L.]. Journal of Applied Physics. 120(8), DOI: http://dx.doi.org/10.1063/1.4961534
      • Journal Article
        Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures
        [Couto, O. D. D., Jr., de Almeida, P. T., dos Santos, G. E., Balanta, M. A. G., Andriolo, H.F., Brum, J.A., Brasil, M. J. S. P., Iikawa, F., Liang, B.L., Huffaker, D.L.]. Journal of Applied Physics. 120(8), DOI: http://dx.doi.org/10.1063/1.4961534
      • Journal Article
        High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light
        [Lee, Wook-Jae, Senanayake, Pradeep, Farrell, AlanC., Lin, Andrew, Hung, Chung-Hong, Huffaker, DianaL.]. Nano Letters. 16(1), 199-204. DOI: http://dx.doi.org/10.1021/acs.nanolett.5b03485
      • Journal Article
        High-density InAs/GaAs1-xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
        [Debnath, M.C., Mishima, T.D., Santos, M.B., Cheng, Y., Whiteside, V.R., Sellers, I.R., Hossain, K., Laghumavarapu, R.B., Liang, B.L., Huffaker, D.L.]. Journal of Applied Physics. 119(11), DOI: http://dx.doi.org/10.1063/1.4943631
      • Journal Article
        High-density InAs/GaAs1-xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
        [Debnath, M.C., Mishima, T.D., Santos, M.B., Cheng, Y., Whiteside, V.R., Sellers, I.R., Hossain, K., Laghumavarapu, R.B., Liang, B.L., Huffaker, D.L.]. Journal of Applied Physics. 119(11), DOI: http://dx.doi.org/10.1063/1.4943631
      • Journal Article
        Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation
        [Komolibus, Katarzyna, Scofield, AdamC., Gradkowski, Kamil, Ochalski, TomaszJ., Kim, Hyunseok, Huffaker, DianaL., Huyet, Guillaume]. Applied Physics Letters. 108(6), DOI: http://dx.doi.org/10.1063/1.4941435
      • Journal Article
        InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors
        [Ariyawansa, Gamini, Reyner, CharlesJ., Steenbergen, ElizabethH., Duran, JoshuaM., Reding, JoshuaD., Scheihing, JohnE., Bourassa, HenryR., Liang, BaolaiL., Huffaker, DianaL.]. Applied Physics Letters. 108(2), DOI: http://dx.doi.org/10.1063/1.4939904
      • Journal Article
        Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links
        [Kim, Hyunseok, Farrell, AlanC., Senanayake, Pradeep, Lee, Wook-Jae, Huffaker, DianaL.]. Nano Letters. 16(3), 1833-1839. DOI: http://dx.doi.org/10.1021/acs.nanolett.5b04883
      • Journal Article
        Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources
        [Lee, Wook-Jae, Kim, Hyunseok, Farrell, AlanC., Senanayake, Pradeep, Huffaker, DianaL.]. Applied Physics Letters. 108(8), DOI: http://dx.doi.org/10.1063/1.4942777

      2015
      • Journal Article
        GaAs and AlGaAs APDs with GaSb absorption regions in a separate absorption and multiplication structure using a hetero-lattice interface
        [Marshall, A. R. J., Craig, A.P., Reyner, C.J., Huffaker, D.L.]. 70, 168-170. DOI: http://dx.doi.org/10.1016/j.infrared.2014.08.014
      • Journal Article
        GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays
        [Juang, Bor-Chau, Laghumavarapu, RameshB., Foggo, BrandonJ., Simmonds, PaulJ., Lin, Andrew, Liang, Baolai, Huffaker, DianaL.]. Applied Physics Letters. 106(11), DOI: http://dx.doi.org/10.1063/1.4915258
      • Journal Article
        High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal-Organic Chemical Vapor Deposition
        [Farrell, AlanC., Lee, Wook-Jae, Senanayake, Pradeep, Haddad, MichaelA., Prikhodko, SergeyV., Huffaker, DianaL.]. Nano Letters. 15(10), 6614-6619. DOI: http://dx.doi.org/10.1021/acs.nanolett.5b02389
      • Journal Article
        Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
        [Ji, Hai-Ming, Liang, Baolai, Simmonds, PaulJ., Juang, Bor-Chau, Yang, Tao, Young, RobertJ., Huffaker, DianaL.]. Applied Physics Letters. 106(10), DOI: http://dx.doi.org/10.1063/1.4914895
      • Journal Article
        Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots
        [Zhao, Zhexin, Laghumavarapu, RameshB., Simmonds, PaulJ., Ji, Haiming, Liang, Baolai, Huffaker, DianaL.]. Journal of Crystal Growth. 425, 312-315. DOI: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.049
      • Journal Article
        Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes
        [Farrell, AlanC., Senanayake, Pradeep, Hung, Chung-Hong, El-Howayek, Georges, Rajagopal, Abhejit, Currie, Marc, Hayat, MajeedM., Huffaker, DianaL.]. Scientific Reports. 5, DOI: http://dx.doi.org/10.1038/srep17580
      • Journal Article
        Template-assisted synthesis of CdS nanocrystal arrays in chemically inhomogeneous pores using a vapor-solid mechanism
        [Grynko, DmytroO., Fedoryak, AlexanderN., Dimitriev, OlegP., Lin, Andrew, Laghumavarapu, RameshB., Huffaker, DianaL., Kratzer, Markus, Piryatinski, YuriP.]. RSC Advances. 5(35), 27496-27501. DOI: http://dx.doi.org/10.1039/c5ra01175b
      • Journal Article
        Ultrafast dynamics of type-II GaSb/GaAs quantum dots
        [Komolibus, K., Piwonski, T., Gradkowski, K., Reyner, C.J., Liang, B., Huyet, G., Huffaker, D.L., Houlihan, J.]. Applied Physics Letters. 106(3), DOI: http://dx.doi.org/10.1063/1.4906106

      2014
      • Journal Article
        Axial Diffusion Barriers in Near-Infrared Nanopillar LEDs
        [Scofield, AdamC., Lin, Andrew, Haddad, Michael, Huffaker, DianaL.]. Nano Letters. 14(11), 6037-6041. DOI: http://dx.doi.org/10.1021/nl501022v
      • Journal Article
        Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions-composite structures grown using interfacial misfit arrays
        [Craig, A.P., Reyner, C.J., Marshall, A. R. J., Huffaker, D.L.]. Applied Physics Letters. 104(21), DOI: http://dx.doi.org/10.1063/1.4879848
      • Journal Article
        Improved quantum dot stacking for intermediate band solar cells using strain compensation
        [Simmonds, PaulJ., Sun, Meng, Laghumavarapu, RameshBabu, Liang, Baolai, Norman, AndrewG., Luo, Jun-Wei, Huffaker, DianaL.]. Nanotechnology. 25(44), DOI: http://dx.doi.org/10.1088/0957-4484/25/44/445402
      • Journal Article
        Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy
        [Bittner, ZacharyS., Hellstroem, Staffan, Polly, StephenJ., Laghumavarapu, RameshB., Liang, Baolai, Huffaker, DianaL., Hubbard, SethM.]. Applied Physics Letters. 105(25), DOI: http://dx.doi.org/10.1063/1.4904076
      • Journal Article
        Rear illumination monolithically integrated GaSb thermophotovoltaic devices grown on semi-insulating GaAs substrate
        [Borrego, J.M., Brown, E., Greiff, P., Huffaker, D.L., Laghumavarapu, R.B., Kim, J., Dutta, P.S.]. 6(1), DOI: http://dx.doi.org/10.1063/1.4828368
      • Journal Article
        Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
        [Yerino, ChristopherD., Simmonds, PaulJ., Liang, Baolai, Jung, Daehwan, Schneider, Christian, Unsleber, Sebastian, Vo, Minh, Huffaker, DianaL., Hoefling, Sven, Kamp, Martin, Lee, MinjooLarry]. Applied Physics Letters. 105(25), DOI: http://dx.doi.org/10.1063/1.4904944
      • Journal Article
        Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap
        [Yerino, ChristopherD., Simmonds, PaulJ., Liang, Baolai, Dorogan, VitaliyG., Ware, MorganE., Mazur, YuriyI., Jung, Daehwan, Huffaker, DianaL., Salamo, GregoryJ., Lee, MinjooLarry]. Applied Physics Letters. 105(7), DOI: http://dx.doi.org/10.1063/1.4893747
      • Journal Article
        Time-, Energy-, and Phase-Resolved Second-Harmonic Generation at Semiconductor Interfaces
        [Nelson, C.A., Luo, J., Jen, A. K. -Y., Laghumavarapu, R.B., Huffaker, D.L., Zhu, X.-Y.]. Journal of Physical Chemistry C. 118(48), 27981-27988. DOI: http://dx.doi.org/10.1021/jp5094614
      • Journal Article
        Tuning the Au-Free InSb Nanocrystal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition
        [Lin, Andrew, Shapiro, JoshuaN., Eisele, Holger, Huffaker, DianaL.]. Advanced Functional Materials. 24(27), 4311-4316. DOI: http://dx.doi.org/10.1002/adfm.201303390

      2013
      • Journal Article
        800meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
        [Nowozin, T., Bonato, L., Hoegner, A., Wiengarten, A., Bimberg, D., Lin, Wei-Hsun, Lin, Shih-Yen, Reyner, C.J., Liang, BaolaiL., Huffaker, D.L.]. Applied Physics Letters. 102(5), DOI: http://dx.doi.org/10.1063/1.4791678
      • Journal Article
        Anisotropic electro-optic effect on InGaAs quantum dot chain modulators
        [Liu, Wei, Liang, Baolai, Huffaker, Diana, Fetterman, Harold]. Optics Letters. 38(20), 4262-4264. DOI: http://dx.doi.org/10.1364/OL.38.004262
      • Journal Article
        Carrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition
        [Thoma, Jiri, Liang, Baolai, Lewis, Liam, Hegarty, StephenP., Huyet, Guillaume, Huffaker, DianaL.]. Applied Physics Letters. 102(11), DOI: http://dx.doi.org/10.1063/1.4795866
      • Journal Article
        Direct-Bandgap Epitaxial Core-Multishell Nanopillar Photovoltaics Featuring Subwavelength Optical Concentrators
        [Mariani, Giacomo, Zhou, Zhengliu, Scofield, Adam, Huffaker, DianaL.]. Nano Letters. 13(4), 1632-1637. DOI: http://dx.doi.org/10.1021/nl400083g
      • Journal Article
        Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices
        [Thoma, Jiri, Liang, Baolai, Lewis, Liam, Hegarty, StephenP., Huyet, Guillaume, Huffaker, DianaL.]. Applied Physics Letters. 102(5), DOI: http://dx.doi.org/10.1063/1.4791565
      • Journal Article
        Enhanced InAs nanopillar electrical transport by in-situ passivation
        [Lin, A., Shapiro, J.N., Scofield, A.C., Liang, B.L., Huffaker, D.L.]. Applied Physics Letters. 102(5), DOI: http://dx.doi.org/10.1063/1.4791592
      • Journal Article
        GaAs nanopillar-array solar cells employing in situ surface passivation
        [Mariani, Giacomo, Scofield, AdamC., Hung, Chung-Hong, Huffaker, DianaL.]. Nature Communications. 4, DOI: http://dx.doi.org/10.1038/ncomms2509
      • Journal Article
        GaSb/InGaAs quantum dot-well hybrid structure active regions in solar cells
        [Laghumavarapu, RameshB., Liang, BaolaiL., Bittner, ZacharyS., Navruz, TugbaS., Hubbard, SethM., Norman, Andrew, Huffaker, DianaL.]. Solar Energy Materials and Solar Cells. 114, 165-171. DOI: http://dx.doi.org/10.1016/j.solmat.2013.02.027
      • Journal Article
        Growth of CdS nanowire crystals: Vapor-liquid-solid versus vapor-solid mechanisms
        [Grynko, D.A., Fedoryak, A.N., Dimitriev, O.P., Lin, A., Laghumavarapu, R.B., Huffaker, D.L.]. 230, 234-238. DOI: http://dx.doi.org/10.1016/j.surfcoat.2013.06.058
      • Journal Article
        Interfacial Misfit Dislocation Arrays
        [Huffaker, DianaL., Nunna, Kalyan]. 1-62.
      • Journal Article
        Photonics based on carbon nanotubes
        [Gu, Qingyuan, Gicquel-Guezo, Maud, Loualiche, Slimane, Le Pouliquen, Julie, Batte, Thomas, Folliot, Herve, Dehaese, Olivier, Grillot, Frederic, Battie, Yann, Loiseau, Annick, Liang, Baolai, Huffaker, Diana]. Nanoscale Research Letters. 8, DOI: http://dx.doi.org/10.1186/1556-276X-8-300
      • Journal Article
        Self-aligned active quantum nanostructures in photonic crystals via selective wet-chemical etching
        [Oh, DongYoon, Kim, Se-Heon, Huang, Jingqing, Scofield, Adam, Huffaker, Diana, Scherer, Axel]. Nanotechnology. 24(26), DOI: http://dx.doi.org/10.1088/0957-4484/24/26/265201
      • Journal Article
        Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement
        [Liang, Baolai, Wong, Ping-Show, Thai Tran, Dorogan, VitaliyG., Mazur, YuriyI., Ware, MorganE., Salamo, GregoryJ., Shih, Chih-Kang, Huffaker, DianaL.]. Nano Research. 6(4), 235-242. DOI: http://dx.doi.org/10.1007/s12274-013-0299-5
      • Journal Article
        Strong passivation effects on the properties of an InAs surface quantum dot hybrid structure
        [Lin, A., Liang, B.L., Dorogan, V.G., Mazur, YuI., Tarasov, G.G., Salamo, G.J., Huffaker, D.L.]. Nanotechnology. 24(7), DOI: http://dx.doi.org/10.1088/0957-4484/24/7/075701
      • Journal Article
        Strongly coupled slow-light polaritons in one-dimensional disordered localized states
        [Gao, Jie, Combrie, Sylvain, Liang, Baolai, Schmitteckert, Peter, Lehoucq, Gaelle, Xavier, Stephane, Xu, XinAn, Busch, Kurt, Huffaker, DianaL., De Rossi, Alfredo, Wong, CheeWei]. Scientific Reports. 3, DOI: http://dx.doi.org/10.1038/srep01994
      • Journal Article
        The effect of passivation on different GaAs surfaces
        [Yu, TedH., Yan, Liang, You, Wei, Laghumavarapu, RameshB., Huffaker, Diana, Ratsch, Christian]. Applied Physics Letters. 103(17), DOI: http://dx.doi.org/10.1063/1.4826480
      • Journal Article
        Tuning Quantum Dot Luminescence Below the Bulk Band Gap Using Tensile Strain
        [Simmonds, PaulJ., Yerino, ChristopherD., Sun, Meng, Liang, Baolai, Huffaker, DianaL., Dorogan, VitaliyG., Mazur, Yuriy, Salamo, Gregory, Lee, MinjooLarry]. ACS Nano. 7(6), 5017-5023. DOI: http://dx.doi.org/10.1021/nn400395y

      2012
      • Journal Article
        Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures
        [Mazur, Yu.I., Dorogan, V.G., Salamo, G.J., Tarasov, G.G., Liang, B.L., Reyner, C.J., Nunna, K., Huffaker, D.L.]. Applied Physics Letters. 100(3), DOI: http://dx.doi.org/10.1063/1.3676274
      • Journal Article
        Composite axial/core-shell nanopillar light-emitting diodes at 1.3 mu m
        [Scofield, A.C., Lin, A., Shapiro, J.N., Senanayake, P.N., Mariani, G., Haddad, M., Liang, B.L., Huffaker, D.L.]. Applied Physics Letters. 101(5), DOI: http://dx.doi.org/10.1063/1.4738997
      • Journal Article
        Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems
        [Gradkowski, K., Ochalski, T.J., Pavarelli, N., Liu, H.Y., Tatebayashi, J., Williams, D.P., Mowbray, D.J., Huyet, G., Huffaker, D.L.]. 85(3), DOI: http://dx.doi.org/10.1103/PhysRevB.85.035432
      • Journal Article
        Strong interband transitions in InAs quantum dots solar cell
        [Wu, Jiang, Makableh, Y. F. M., Vasan, R., Manasreh, M.O., Liang, B., Reyner, C.J., Huffaker, D.L.]. Applied Physics Letters. 100(5), DOI: http://dx.doi.org/10.1063/1.3681360

      2011
      • Journal Article
        Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction
        [Reyner, CharlesJ., Wang, Jin, Nunna, Kalyan, Lin, Andrew, Liang, Baolai, Goorsky, MarkS., Huffaker, D.L.]. Applied Physics Letters. 99(23), DOI: http://dx.doi.org/10.1063/1.3666234
      • Journal Article
        Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface
        [Liang, B.L., Wong, P.S., Pavarelli, N., Tatebayashi, J., Ochalski, T.J., Huyet, G., Huffaker, D.L.]. Nanotechnology. 22(5), DOI: http://dx.doi.org/10.1088/0957-4484/22/5/055706
      • Journal Article
        Potential energy surface of In and Ga adatoms above the (111)A and (110) surfaces of a GaAs nanopillar
        [Shapiro, J.N., Lin, A., Huffaker, D.L., Ratsch, C.]. 84(8), DOI: http://dx.doi.org/10.1103/PhysRevB.84.085322
      • Journal Article
        Surface Plasmon-Enhanced Nanopillar Photodetectors
        [Senanayake, Pradeep, Hung, Chung-Hong, Shapiro, Joshua, Lin, Andrew, Liang, Baolai, Williams, BenjaminS., Huffaker, D.L.]. Nano Letters. 11(12), 5279-5283. DOI: http://dx.doi.org/10.1021/nl202732r

      2010
      • Journal Article
        1.52 mu m photoluminescence emissions from InAs quantum dots grown on nanopatterned GaAs buffers
        [Wong, P.S., Liang, B.L., Lin, A., Tatebayashi, J., Huffaker, D.L.]. Applied Physics Letters. 97(14), DOI: http://dx.doi.org/10.1063/1.3499287
      • Journal Article
        Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition
        [He, J., Reyner, C.J., Liang, B.L., Nunna, K., Huffaker, D.L., Pavarelli, N., Gradkowski, K., Ochalski, T.J., Huyet, G., Dorogan, V.G., Mazur, Yu.I., Salamo, G.J.]. Nano Letters. 10(8), 3052-3056. DOI: http://dx.doi.org/10.1021/nl102237n
      • Journal Article
        InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy
        [Shapiro, J.N., Lin, A., Wong, P.S., Scofield, A.C., Tu, C., Senanayake, P.N., Mariani, G., Liang, B.L., Huffaker, D.L.]. Applied Physics Letters. 97(24), DOI: http://dx.doi.org/10.1063/1.3526734
      • Journal Article
        Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes
        [Tatebayashi, J., Mariani, G., Lin, A., Hicks, R.F., Huffaker, D.L.]. Applied Physics Letters. 96(25), DOI: http://dx.doi.org/10.1063/1.3455340
      • Journal Article
        Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon
        [Tatebayashi, J., Lin, A., Wong, P.S., Hick, R.F., Huffaker, D.L.]. Journal of Applied Physics. 108(3), DOI: http://dx.doi.org/10.1063/1.3457355

      2009
      • Journal Article
        Compensation of interfacial states located inside the "buffer-free" GaSb/GaAs (001) heterojunction via delta-doping
        [Jallipalli, A., Nunna, K., Kutty, M.N., Balakrishnan, G., Lush, G.B., Dawson, L.R., Huffaker, D.L.]. Applied Physics Letters. 95(7), DOI: http://dx.doi.org/10.1063/1.3210783
      • Journal Article
        Electronic characteristics of the interfacial states embedded in "buffer-free" GaSb/GaAs (001) heterojunctions
        [Jallipalli, A., Nunna, K., Kutty, M.N., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.]. Applied Physics Letters. 95(20), DOI: http://dx.doi.org/10.1063/1.3266835
      • Journal Article
        Fabrication and characteristics of broad-area light-emitting diode based on nanopatterned quantum dots
        [Wong, P.S., Liang, B.L., Tatebayashi, J., Xue, L., Nuntawong, N., Kutty, M.N., Brueck, S. R. J., Huffaker, D.L.]. Nanotechnology. 20(3), DOI: http://dx.doi.org/10.1088/0957-4484/20/3/035302
      • Journal Article
        Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90A degrees Misfit Dislocations
        [Jallipalli, A., Balakrishnan, G., Huang, S.H., Rotter, T.J., Nunna, K., Liang, B.L., Dawson, L.R., Huffaker, D.L.]. Nanoscale Research Letters. 4(12), 1458-1462. DOI: http://dx.doi.org/10.1007/s11671-009-9420-9

      2008
      • Journal Article
        Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array
        [Tatebayashi, J., Jallipalli, A., Kutty, M.N., Huang, S.H., Rotter, T.J., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.]. Journal of Electronic Materials. 37(12), 1758-1763. DOI: http://dx.doi.org/10.1007/s11664-008-0534-0
      • Journal Article
        Fabrication of self-aligned enhancement-mode In0.53Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack
        [Shahrjerdi, Davood, Rotter, Thomas, Balakrishnan, Ganish, Huffaker, Diana, Tutuc, Emanuel, Banerjee, SanjayK.]. 29(6), 557-560. DOI: http://dx.doi.org/10.1109/LED.2008.922031
      • Journal Article
        Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth
        [Lee, S.C., Huffaker, D.L., Brueck, S. R. J.]. Applied Physics Letters. 92(2), DOI: http://dx.doi.org/10.1063/1.2830988
      • Journal Article
        Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure
        [Wong, P.S., Liang, B.L., Dorogan, V.G., Albrecht, A.R., Tatebayashi, J., He, X., Nuntawong, N., Mazur, YuI., Salamo, G.J., Brueck, S. R. J., Huffaker, D.L.]. Nanotechnology. 19(43), DOI: http://dx.doi.org/10.1088/0957-4484/19/43/435710
      • Journal Article
        Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures
        [Timm, R., Lenz, A., Eisele, H., Ivanova, L., Daehne, M., Balakrishnan, G., Huffaker, D.L., Farrer, I., Ritchie, D.A.]. 26(4), 1492-1503. DOI: http://dx.doi.org/10.1116/1.2952451
      • Journal Article
        Self-Organized Formation of GaSb/GaAs Quantum Rings
        [Timm, R., Eisele, H., Lenz, A., Ivanova, L., Balakrishnan, G., Huffaker, D.L., Daehne, M.]. Physical Review Letters. 101(25), DOI: http://dx.doi.org/10.1103/PhysRevLett.101.256101
      • Journal Article
        Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
        [Huang, S.H., Balakrishnan, G., Khoshakhlagh, A., Dawson, L.R., Huffaker, D.L.]. Applied Physics Letters. 93(7), DOI: http://dx.doi.org/10.1063/1.2970997
      • Journal Article
        Time-resolved photoluminescence of type-II Ga(As) Sb/GaAs quantum dots embedded in an InGaAs quantum well
        [Tatebayashi, J., Liang, B.L., Laghumavarapu, R.B., Bussian, D.A., Htoon, H., Klimov, V., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.]. Nanotechnology. 19(29), DOI: http://dx.doi.org/10.1088/0957-4484/19/29/295704

      2007
      • Journal Article
        1.54 mu m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays
        [Jallipalli, A., Kutty, M.N., Balakrishnan, G., Tatebayashi, J., Nuntawong, N., Huang, S.H., Dawson, L.R., Huffaker, D.L., Mi, Z., Bhattacharya, P.]. Electronics Letters. 43(22), 1198-1199. DOI: http://dx.doi.org/10.1049/el:20072441
      • Journal Article
        Arsenic-induced etched nanovoids on GaSb(100)
        [Huang, S.H., Balakrishnan, G., Mehta, M., Dawson, L.R., Huffaker, D.L., Li, P.]. Journal of Applied Physics. 102(4), DOI: http://dx.doi.org/10.1063/1.2772532
      • Journal Article
        Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials
        [Jallipalli, A., Balakrishnan, G., Huang, S.H., Khoshakhlagh, A., Dawson, L.R., Huffaker, D.L.]. Journal of Crystal Growth. 303(2), 449-455. DOI: http://dx.doi.org/10.1016/j.jcrysgro.2006.12.032
      • Journal Article
        Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids
        [Wong, P.S., Balakrishnan, G., Nuntawong, N., Tatebayashi, J., Huffaker, D.L.]. Applied Physics Letters. 90(18), DOI: http://dx.doi.org/10.1063/1.2732825
      • Journal Article
        Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb
        [Huang, S.H., Balakrishnan, G., Mehta, M., Khoshakhlagh, A., Dawson, L.R., Huffaker, D.L., Li, P.]. Applied Physics Letters. 90(16), DOI: http://dx.doi.org/10.1063/1.2723649
      • Journal Article
        GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response
        [Laghumavarapu, R.B., Moscho, A., Khoshakhlagh, A., El-Emawy, M., Lester, L.F., Huffaker, D.L.]. Applied Physics Letters. 90(17), DOI: http://dx.doi.org/10.1063/1.2734492
      • Journal Article
        Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers
        [Laghumavarapu, R.B., El-Emawy, M., Nuntawong, N., Moscho, A., Lester, L.F., Huffaker, D.L.]. Applied Physics Letters. 91(24), DOI: http://dx.doi.org/10.1063/1.2816904
      • Journal Article
        Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well
        [Tatebayashi, J., Khoshakhlagh, A., Huang, S.H., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.]. Applied Physics Letters. 90(26), DOI: http://dx.doi.org/10.1063/1.2752018
      • Journal Article
        Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures
        [Nuntawong, N., Tatebayashi, J., Wong, P.S., Huffaker, D.L.]. Applied Physics Letters. 90(16), DOI: http://dx.doi.org/10.1063/1.2730732
      • Journal Article
        Measurement of electro-optic coefficients of 1.3 mu m self-assembled InAs/GaAs quantum dots
        [Tatebayashi, J., Laghumavarapu, R.B., Nuntawong, N., Huffaker, D.L.]. Electronics Letters. 43(7), 410-412. DOI: http://dx.doi.org/10.1049/el:20070245
      • Journal Article
        Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si(100) substrates
        [Balakrishnan, G., Mehta, M., Kutty, M.N., Patel, P., Albrecht, A.R., Rotella, P., Krishna, S., Dawson, L.R., Huffaker, D.L.]. Electronics Letters. 43(4), 244-245. DOI: http://dx.doi.org/10.1049/el:20073333
      • Journal Article
        Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids
        [Liang, B.L., Wong, P.S., Nuntawong, N., Albrecht, A.R., Tatebayashi, J., Rotter, T.J., Balakrishnan, G., Huffaker, D.L.]. Applied Physics Letters. 91(24), DOI: http://dx.doi.org/10.1063/1.2821121
      • Journal Article
        Room temperature InGaSb quantum well microcylinder lasers at 2 mu m grown monolithically on a silicon substrate
        [Yang, Tian, Lu, Ling, Shih, Min-Hsiung, O'Brien, J.D., Balakrishnan, Ganesh, Huffaker, D.L.]. 25(5), 1622-1625. DOI: http://dx.doi.org/10.1116/1.2778693
      • Journal Article
        Room-temperature lasing at 1.82 mu m of GaInSb/AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array
        [Tatebayashi, J., Jallipalli, A., Kutty, M.N., Huang, S.H., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.]. Applied Physics Letters. 91(14), DOI: http://dx.doi.org/10.1063/1.2793186
      • Journal Article
        Room-temperature operation of buffer-free GaSb-AlGaSb quantum-well diode lasers grown on a GaAs platform emitting at 1.65 mu m
        [Mehta, M., Jallipalli, A., Tatebayashi, J., Kutty, M.N., Albrecht, A., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.]. 19(17-20), 1628-1630. DOI: http://dx.doi.org/10.1109/LPT.2007.904928
      • Journal Article
        Single dot spectroscopy of site-controlled InAs quantum dots nucleated on GaAs nanopyramids
        [Tran, T., Muller, A., Shih, C.K., Wong, P.S., Balakrishnan, G., Nuntawong, N., Tatebayashi, J., Huffaker, D.L.]. Applied Physics Letters. 91(13), DOI: http://dx.doi.org/10.1063/1.2790498

      2006
      • Journal Article
        Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots
        [Tatebayashi, J., Khoshakhlagh, A., Huang, S.H., Dawson, L.R., Balakrishnan, G., Huffaker, D.L.]. Applied Physics Letters. 89(20), DOI: http://dx.doi.org/10.1063/1.2390654
      • Journal Article
        GaSb quantum-well-based "buffer-free" vertical light emitting diode monolithically embedded within a GaAs cavity incorporating interfacial misfit arrays
        [Mehta, M., Balakrishnan, G., Huang, S., Khoshakhlagh, A., Jallipalli, A., Patel, P., Kutty, M.N., Dawson, L.R., Huffaker, D.L.]. Applied Physics Letters. 89(21), DOI: http://dx.doi.org/10.1063/1.2396897
      • Journal Article
        III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
        [Balakrishnan, G., Tatebayashi, J., Khoshakhlagh, A., Huang, S.H., Jallipalli, A., Dawson, L.R., Huffaker, D.L.]. Applied Physics Letters. 89(16), DOI: http://dx.doi.org/10.1063/1.2362999
      • Journal Article
        Room-temperature optically pumped (Al)GaSb vertical-cavity surface-emitting laser monolithically grown on an Si(100) substrate
        [Balakrishnan, Ganesh, Jallipalli, Anitha, Rotella, Paul, Huang, Shenghong, Khoshakhlagh, Arezou, Amtout, Abdenour, Krishna, Sanjay, Dawson, L.Ralph, Huffaker, DianaL.]. 12(6), 1636-1641. DOI: http://dx.doi.org/10.1109/JSTQE.2006.885342

      2019
      • Conference Proceeding
        A comprehensive set of simulation tools to model and design high performance Type-II InAs/GaSb superlattice infrared detectors
        Proceedings of SPIE
        [Delmas, M., Liang, B.L., Huffaker, D.L.]. 10926, DOI: http://dx.doi.org/10.1117/12.2509480

      2018
      • Conference Proceeding
        Electron and Proton Radiation Effects on Band Structure and Carrier Dynamics in MBE and MOCVD Grown III-V Test Structures
        World Conference on Photovoltaic Energy Conversion WCPEC
        [Hudson, Andrew, Scofield, Adam, Lotshaw, William, Hubbard, Seth, Slocum, Michael, Liang, Baolai, Debnath, MukulC., Juang, Bor-Chau, Huffaker, DianaL.]. 3265-3270.
      • Conference Proceeding
        Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers
        Proceedings of SPIE
        [Ren, Dingkun, Rong, Zixuan, Minh, Cao, Farrell, AlanC., Meng, Xiao, Huffaker, DianaL.]. 10531, DOI: http://dx.doi.org/10.1117/12.2296791
      • Conference Proceeding
        High-Power Terahertz Generation from Telecommunication-Compatible, Bias-Free Photoconductive Nano-Antennas
        International Conference on Infrared Millimeter and Terahertz Waves
        [Turan, Deniz, Yardimci, NezihT., Rong, Zixuan, Ren, Dingkun, Kim, Hyunseok, Huffaker, Diana, Jarrahi, Mona].
      • Conference Proceeding
        Numerical analysis of nanowire surface recombination using a three-dimensional transient model
        Proceedings of SPIE
        [Ren, Dingkun, Rong, Zixuan, Liang, Baolai, Huffaker, DianaL.]. 10543, DOI: http://dx.doi.org/10.1117/12.2295768

      2017
      • Conference Proceeding
        GaSb on GaAs solar cells Grown using interfacial misfit arrays
        Proceedings of SPIE
        [Nelson, GeorgeT., Juang, Bor-Chau, Slocum, MichaelA., Bittner, ZacharyS., Laghumavarapu, Ramesh Babu B., Huffaker, DianaL., Hubbard, SethM.]. 10099, DOI: http://dx.doi.org/10.1117/12.2256426
      • Conference Proceeding
        Investigation and Mitigation of Shunts for Higher Efficiency Epitaxial GaSb/GaSb and GaSb/GaAs Solar Cells
        IEEE Photovoltaic Specialists Conference
        [Nelson, GeorgeT., Juang, Bor-Chau, Johnston, Steve, Slocum, MichaelA., Bittner, ZacharyS., Lagumavarapu, RameshB., Huffaker, Diana, Hubbard, SethM.]. 202-205.
      • Conference Proceeding
        Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics
        Proceedings of SPIE
        [Scofield, A.C., Hudson, A.I., Liang, B.L., Juang, B.C., Huffaker, D.L., Lotshaw, W.T.]. 10193, DOI: http://dx.doi.org/10.1117/12.2262807
      • Conference Proceeding
        Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics
        Proceedings of SPIE
        [Scofield, A.C., Hudson, A.I., Liang, B.L., Juang, B.C., Huffaker, D.L., Lotshaw, W.T.]. 10193, DOI: http://dx.doi.org/10.1117/12.2262807
      • Conference Proceeding
        Optical characteristics of InAlAs/GaAlAs/GaAs quantum dots (Conference Presentation)
        Proceedings of SPIE
        [Liang, Baolai, Huffaker, DianaL., Mazur, YuriyI., Ware, Morgan, Salamo, GregoryJ., Su, Linlin, Wang, Ying, Guo, Qinglin]. 10114, DOI: http://dx.doi.org/10.1117/12.2251605
      • Conference Proceeding
        Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources
        Proceedings of SPIE
        [Morales, J. S. D., Gandan, S., Ren, D., Ochalski, TomaszJ., Huffaker, DianaL.]. 10114, DOI: http://dx.doi.org/10.1117/12.2252507
      • Conference Proceeding
        Simulation and Spectroscopy of Carrier Relaxation in GaSb and GaAs
        IEEE Photovoltaic Specialists Conference
        [Scofield, A.C., Hudson, A.I., Liang, B.L., Juang, B.C., Huffaker, D.L., Hubbard, S.M., Lotshaw, W.T.]. 2755-2757.
      • Conference Proceeding
        Simulation and Spectroscopy of Carrier Relaxation in GaSb and GaAs
        IEEE Photovoltaic Specialists Conference
        [Scofield, A.C., Hudson, A.I., Liang, B.L., Juang, B.C., Huffaker, D.L., Hubbard, S.M., Lotshaw, W.T.]. 2755-2757.

      2016
      • Conference Proceeding
        GaSb On GaAs Interfacial Misfit Solar Cells
        IEEE Photovoltaic Specialists Conference
        [Nelson, GeorgeT., Juang, Bor-Chau, Slocum, Michael, Bittner, Zachary, Lagumavarapu, RameshB., Huffaker, Diana, Hubbard, Seth]. 2349-2353.
      • Conference Proceeding
        GaSb-based Photon Counting Gamma-ray Detectors
        [Juang, Bor-Chau, Prout, DavidL., Liang, Baolai, Chatziioannou, AnionF., Huffaker, DianaL.].
      • Conference Proceeding
        Spectroscopic Diagnostics of Defect and Interface Effects on Carrier Dynamics in Semiconductor Optoelectronics
        Proceedings of SPIE
        [Scofield, A.C., Hudson, A.I., Liang, B.L., Wells, N.P., Huffaker, D.L., Lotshaw, W.T.]. 9835, DOI: http://dx.doi.org/10.1117/12.2224308
      • Conference Proceeding
        Spectroscopic Diagnostics of Defect and Interface Effects on Carrier Dynamics in Semiconductor Optoelectronics
        Proceedings of SPIE
        [Scofield, A.C., Hudson, A.I., Liang, B.L., Wells, N.P., Huffaker, D.L., Lotshaw, W.T.]. 9835, DOI: http://dx.doi.org/10.1117/12.2224308

      2015
      • Conference Proceeding
        Complex emission dynamics from In GaAs/GaAs core-shell nanopillars
        Proceedings of SPIE
        [Komolibus, Katarzyna, Scofield, AdamC., Ochalski, TomaszJ., Kelleher, Bryan, Goulding, David, Huffaker, DianaL., Huyet, Guillaume]. 9373, DOI: http://dx.doi.org/10.1117/12.2080269
      • Conference Proceeding
        Intermediate Band Solar Cell Design using InAs quantum dots in AlAsSb Cladding
        IEEE Photovoltaic Specialists Conference
        [Hubbard, SethM., Hellstroem, Staffan, Bittner, ZacharyS., Laghumavarapu, RameshB., Huffaker, Diana].
      • Conference Proceeding
        Nanopillar optical antenna nBn detectors for subwavelength infrared pixels
        Proceedings of SPIE
        [Hung, ChungHong, Senanayake, Pradeep, Lee, Wook-Jae, Farrell, Alan, Hsieh, Nick, Huffaker, DianaL.]. 9481, DOI: http://dx.doi.org/10.1117/12.2177483

      2014
      • Conference Proceeding
        Analytical Model for Impact Ionization in 3D Multiplication Regions
        IEEE Photonics Conference
        [El-Howayek, G., Milner, B.M., Senanayake, P., Huffaker, D.L., Hayat, M.M.]. 168-169.
      • Conference Proceeding
        Experimental Examination of an InAs/GaAs(Sb)/AlAsSb Quantum Dot Approach to the Intermediate Band Solar Cell
        [Bittner, ZacharyS., Laghumavarapu, RameshB., Hellstroem, Staffan, Huffaker, Diana, Liang, Baolai, Hubbard, SethM.]. 3626-3628.
      • Conference Proceeding
        Reflection Spectromicroscopy for the Design of Nanopillar Optical Antenna Detectors
        IEEE Device Research Conference Proceedings
        [Farrell, AlanC., Senanayake, Pradeep, Hung, Chung-Hong, Currie, Marc, Huffaker, DianaL.]. 175-+.

      2013
      • Conference Proceeding
        Direct-bandgap nanopillar photovoltaics based on patterned catalyst-free epitaxy
        Proceedings of SPIE
        [Mariani, Giacomo, Huffaker, DianaL.]. 8725, DOI: http://dx.doi.org/10.1117/12.2018125
      • Conference Proceeding
        Experimental matrix study of leakage current in nanopillar-based devices towards high-efficiency photovoltaics
        IEEE Photovoltaic Specialists Conference
        [Mariani, Giacomo, Tu, Clayton, Zhou, Zhengliu, Scofield, Adam, Shapiro, Joshua, Huffaker, DianaL.]. 3200-3202.
      • Conference Proceeding
        GaSb/InGaAs Quantum Dot-Well Solar Cells
        IEEE Photovoltaic Specialists Conference
        [Laghumavarapu, RameshB., Liang, BaolaiL., Bittner, Zachery, Navruz, TugbaS., Hubbard, SethM., Norman, Andrew, Huffaker, DianaL.]. 292-295.
      • Conference Proceeding
        Towards intermediate-band solar cells with InAs/AlAsSb quantum dots
        IEEE Photovoltaic Specialists Conference
        [Sun, Meng, Simmonds, PaulJ., Laghumayarapu, RameshBabu, Lin, Andrew, Reyner, CharlesJ., Liang, Baolai, Huffaker, DianaL.]. 3493-3496.

      2012
      • Conference Proceeding
        Room Temperature Continuous Wave Lasing in Nanopillar Photonic Crystal Cavities
        Conference on Lasers and Electro-Optics
        [Scofield, A.C., Kim, S-H, Shapiro, J.N., Lin, A., Liang, B.L., Scherer, A., Huffaker, D.L.].
      • Conference Proceeding
        Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates
        Proceedings of SPIE
        [Marshall, Andrew R. J., Nunna, Kalyan, Tan, SiewLi, Reyner, CharlesJ., Liang, Baolai, Jallipalli, Anitha, David, John P. R., Huffaker, D.L.]. 8541, DOI: http://dx.doi.org/10.1117/12.974765
      • Conference Proceeding
        Strong coupling between single quantum dot and localized mode in photonic crystal waveguide
        Conference on Lasers and Electro-Optics
        [Gao, Jie, Combrie, Sylvain, Liang, Baolai, Lehoucq, Gaelle, Huffaker, DianaL., De Rossi, Alfredo, Wong, CheeWei].

      2011
      • Conference Proceeding
        Bottom-up Photonic Crystal Cavities Formed by III-V Nanopillar Arrays
        Conference on Lasers and Electro-Optics
        [Scofield, A.C., Shapiro, J.N., Lin, A., Williams, A.D., Wong, P.S., Liang, B.L., Huffaker, D.L.].
      • Conference Proceeding
        Optical Properties of Strain-balanced InAs/InAs1-xSbx Type-II Superlattices
        AIP Conference Proceedings
        [Steenbergen, E.H., Huang, Y., Ryou, J.-H., Dupuis, R.D., Nunna, K., Huffaker, D.L., Zhang, Y.-H.]. 1416, 122-125. DOI: http://dx.doi.org/10.1063/1.3671713
      • Conference Proceeding
        Surface plasmon enhanced nanopillar photodetector array
        [Senanayake, P.N., Hung, C.H., Shapiro, J., Lin, A., Huffaker, D.L.]. 809-810.

      2010
      • Conference Proceeding
        High-Bit-Rate Pump-Probe Experiments on Bundled Single-Walled Carbon Nanotubes for 1.55 mu m Telecom Signal Regeneration
        [Nong, H., Gicquel, M., Bramerie, L., Grillot, F., Perrin, M., Liang, B.L., Huffaker, D.L., Loualiche, S.].
      • Conference Proceeding
        HYBRID SOLAR CELLS USING GAAS NANOPILLARS
        IEEE Photovoltaic Specialists Conference
        [Laghumavarapu, R.B., Mariani, G., de Villers, B. Tremolet, Shapiro, J., Senanayake, P., Lin, A., Schwartz, B.J., Huffaker, D.L.].

      2009
      • Conference Proceeding
        Energy transfer in patterned InAs quantum dot cluster grown on GaAs nano-pyramid
        International Conference on Indium Phosphide and Related Materials
        [Liang, B.L., Wong, P.S., Tatebayashi, J., Huffaker, D.L.]. 75-76.
      • Conference Proceeding
        Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate
        Proceedings of SPIE
        [Liang, B.L., Wong, P.S., Dorogan, B. V. G., Tatebayashi, J., Albrecht, A.R., Xiang, H., Mazur, Yu.I., Salamo, G.J., Brueck, S. R. J., Huffaker, D.L.]. 7224, DOI: http://dx.doi.org/10.1117/12.809784

      2008
      • Conference Proceeding
        1.52 mu m photoluminescence from InAs quantum dots grown on patterned GaAs buffer
        International Conference on Indium Phosphide and Related Materials
        [Wong, P.S., Liang, B.L., Nuntawong, N., Xue, L., Tatebayashi, J., Brueck, S. R. J., Huffaker, D.L.]. 408-+.
      • Conference Proceeding
        Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 mu m VECSELs
        Proceedings of SPIE
        [Balakrishnan, G., Rotter, T.J., Jallipalli, A., Dawson, L.R., Huffaker, D.L.]. 6871, DOI: http://dx.doi.org/10.1117/12.776256
      • Conference Proceeding
        Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates
        Proceedings of SPIE
        [Tatebayashi, J., Jallipalli, A., Kutty, M.N., Huang, S.H., Nuntawong, N., Balakrishnan, G., Dawson, L.R., Huffaker, D.L.]. 6909, DOI: http://dx.doi.org/10.1117/12.775340
      • Conference Proceeding
        Photoluminescence comparison analysis of patterned and self-assembled quantum dots by MOCVD
        [Wong, P.S., Liang, B.L., Nuntawong, N., Tatebayashi, J., Huffaker, D.L., Dorogan, V.G., Mazur, Yu.I., Salamo, G.I.]. 2485-+.

      2007
      • Conference Proceeding
        1.55 mu m GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays
        [Mehta, M., Balakrishnan, G., Kutty, M.N., Patel, P., Dawson, L.R., Huffaker, D.L.]. 1187-1188.
      • Conference Proceeding
        Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling
        Proceedings of SPIE
        [Laghumavarapu, R.B., Nuntawong, N., Albrecht, A.R., Huffaker, D.L.]. 6461, DOI: http://dx.doi.org/10.1117/12.708337
      • Conference Proceeding
        Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays.
        Proceedings of SPIE
        [Huffaker, D.L., Balakrishnan, G., Jallipalli, A., Kutty, M.N., Huang, S.H., Dawson, L.R.]. 6775, DOI: http://dx.doi.org/10.1117/12.737224
      • Conference Proceeding
        Monolithically Integrated III-Sb Superluminescent Light Emitting Diodes on Si (100) Substrates
        [Huffaker, D.L., Balakrishnan, G., Mehta, M., Kutty, M.N., Rotella, P., Krishna, S., Dawson, L.R.]. 823-824.
      • Conference Proceeding
        Type II strain layer superlattices (SLS's) grown on GaAs substrates
        IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
        [Sharma, Y.D., Bishop, G., Kim, H.S., Rodriguez, J.B., Plis, E., Balakrishnan, G., Dawson, L.R., Huffaker, D.L., Krishna, S.]. 96-97.

      2006
      • Conference Proceeding
        Controlled crystal structure in patterned InAs quantum dot formation by selective area MOCVD
        IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
        [Wong, P.S., Nuntawong, N., Xue, L., Tatebayashi, J., Albrecht, A., Rotella, P., Brueck, S. R. J., Huffaker, D.L.]. 108-+.
      • Conference Proceeding
        GaSb QW-based 'buffer-free' vertical LED monolithically embedded within a GaAs cavity using interfacial misfit arrays
        IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
        [Huffaker, D.L., Mehta, M., Balakrishnan, G., Huang, S., Khoshakhlagh, A., Patel, P., Kutty, M.N., Dawson, L.R.]. 180-+.
      • Conference Proceeding
        Low threshold current operation of stacked InAs/GaAs quantum dot lasers with gap strain-compensation layers
        [Tatebayashi, J., Nuntawong, N., Xin, Y.C., Wong, P.S., Huang, S., Hains, C.P., Lester, L.F., Huffaker, D.L.]. 108-+.
      • Conference Proceeding
        Monolithic, bufferless AlGaSb emitters on si based on interfacial misfit arrays
        [Huffaker, Diana]. 211-+.
      • Conference Proceeding
        Onset of GaSb/GaAs quantum dot formation
        Physica Status Solidi C-Current Topics in Solid State Physics
        [Timm, R., Lenz, A., Eisele, H., Ivanova, L., Poetschke, K., Pohl, U.W., Bimberg, D., Balakrishnan, G., Huffaker, D.L., Daehne, M.]. 3(11), 3971-+. DOI: http://dx.doi.org/10.1002/pssc.200671605
      • Conference Proceeding
        Room temperature InGaSb quantum well microcylinder lasers at 2 mu m grown monolithically on a silicon substrate
        IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting
        [Yang, Tian, Balakrishnan, Ganesh, Lu, Ling, Shih, Min-Hsiung, O'Brien, J.D., Huffaker, D.L.]. 731-+.
      • Conference Proceeding
        Strain-compensation in closely-stacked quantum dot active regions grown by metal organic chemical vapor deposition
        Proceedings of SPIE
        [Nuntawong, N., Tatebayashi, J., Wong, P.S., Xin, Y.C., Hains, C.P., Huang, S., Lester, L.F., Huffaker, D.L.]. 6129, DOI: http://dx.doi.org/10.1117/12.656492

      2017
      • Other
        Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111) A, (111) B, and (110)
        [Yerino, ChristopherD., Liang, Baolai, Huffaker, DianaL., Simmonds, PaulJ., Lee, MinjooLarry]. 35(1), DOI: http://dx.doi.org/10.1116/1.4972049

      2016
      • Other
        Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links (vol 16, pg 1833, 2016)
        [Kim, Hyunseok, Farrell, AlanC., Senanayake, Pradeep, Lee, Wook-Jae, Huffaker, Diana.L.]. Nano Letters. 16(4), 2896-2896. DOI: http://dx.doi.org/10.1021/acs.nanolett.6b00913
      • Other
        Compound Semiconductors Preface
        [Mishra, Umesh, Huffaker, Diana, Choquette, Kent, Palacios, Tomas, Matioli, Elison, Myers, Roberto, Rajan, Siddharth, Wang, Han]. 253(4), 612-612. DOI: http://dx.doi.org/10.1002/pssb.201670528

      2013
      • Other
        GaAs nanopillar-array solar cells employing in situ surface passivation (vol 4, 1497, 2013)
        [Mariani, Giacomo, Scofield, AdamC., Hung, Chung-Hong, Huffaker, DianaL.]. Nature Communications. 4, DOI: http://dx.doi.org/10.1038/ncomms3026

      2009
      • Other
        Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices
        [Tatebayashi, J., Nuntawong, N., Wong, P.S., Xin, Y-C, Lester, L.F., Huffaker, D.L.]. Journal of Physics D: Applied Physics. 42(7), DOI: http://dx.doi.org/10.1088/0022-3727/42/7/073002

      2008

Service to the University

    • Sept 2020 to  Present Attendee, Meeting
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      represent EE department
      integrate COE committee activities to EE department
    • Aug 2020 to  Present Attendee, Meeting
      UTA Chair Board
      Participate in discussions
      Integrate ideas into EE departmental functions

Service to the Community

Service to the Community

    • Sept 2020 to  Present
      Attendee, Meeting
      Electrical and Computer Engineering Department Chairs Association
      Share ideas associated with ECE nation-wide
      Chair SWECEHDA starting June 2021