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Kambiz Alavi

Name

[Alavi, Kambiz]
  • Professor

Professional Preparation

    • 1981 Ph.D. in PhysicsMassachusetts Institute of Technology
    • 1977 M.S. in PhysicsMassachusetts Institute of Technology
    • 1972 B.S. in PhysicsMassachusetts Institute of Technology

Appointments

    • Jan 2008 to Present Professor and Associate Chair
      University of Texas at Arlington
    • Jan 2008 to Present Adjunct Professor
      UT Southweastern Medical School at Dallas
    • Jan 2001 to Jan 2003 Department Manager
      BAE Systems, NH
    • Jan 1994 to Jan 2013 Professor
      University of Texas at Arlington
    • Jan 1988 to Jan 1994 Assoc Prof
      University of Texas at Arlington
    • Jan 1983 to Jan 1988 Research Scientist
      Siemens Research and Technology Laboratories
    • Jan 1981 to Jan 1983 Postdoctoral Member of Technical Staff
      AT&T Bell Laboratories

Research and Expertise

  • Background and Areas of Expertise
    Dr. Kambiz Alavi Office Tel. No.: (817) 272-5633 E-Mail Address: alavi@uta.edu Professor and Associat Chair, Departmernt of Electrical Engineering, UTA Ph.D. Massachusetts Institute of Technology 1981 M.S. Massachusetts Institute of Technology 1977 B.S. Massachusetts Institute of Technology 1972 Areas of Expertise Molecular Beam Epitaxy (MBE) of Compound Semiconductors, physics and applications of heterostructures, multiple quantum wells and superlattices for optoelectronic and electronic devices, magneto-optics; nonlinear optics. Research activities at UTA includes: low temperature grown GaAs (LTG-GaAs), chirped superlattices for MQW waveguide and transverse electroabsorption modulators, superlattice and asymmetric quantum well for infrared detectors, vertical cavity surface emitting lasers (VCSL) incorporating novel guided mode resonant mirrors, and lateral selective oxidation of MBE heterostructures for development of lattice-matched insulators in the III-V compounds. Background Kambiz Alavi received his undergraduate and graduate education in Physics at M.I.T. (Ph.D. 1981). He joined the Solid State Electronics Research Laboratory at Bell Laboratories in Murray Hill, NJ in 1981. There he collaborated in pioneering research in molecular beam epitaxy of (In, Al, Ga)As heterostructures for optoelectronic and electron devices including novel transistors, MQW lasers and graded bandgap MQW APDs. In 1983 he joined Siemens Research and Technology Laboratories in Princeton, NJ to establish a new MBE Laboratory for optoelectronic and electron device R&D. He joined UTA Electrical Engineering Dept. in August 1988 as an Associate professor. He has established and conducted interdisciplinary research in MBE materials growth, fabrication, and characterization of optoelectronic and electron devices in collaboration with industry and faculty within UTA and other universities. He has developed several graduate courses on these subjects. Dr. Alavi was promoted to full professor in 1994 and received the UTA College of Engineering "Haliburton Excellence in Research Award" in 1996. In summer of 1997 he was awarded an NSF University/Industry Research Fellowship at Texas Instruments, were he participated in MBE growth and characterization of InGaP/InGaAs/GaAs/AlGaAs structures for the development of high efficiency pseudomorphic high electron mobility transistors (PHEMT). Dr. Alavi has been a senior member of IEEE since 1988, is a member of NSF Industry/University Cooperative Research Center for Electronic Materials, Devices, and Systems (CEMDAS) (a joint center of UTA and Texas A&M University) and a member of Metroplex Research Consortium for Electronic Devices and Materials. From 2001-2003 he was on leave of absence from UTA and worked at BAE Systems in Nashua NH in Advanced Technology and Systems division as a Department Manger in the Integrated Optoelectronics Group. Returning to UTA, he became a founding member of Advanced Imaging Research Center, a Joint Center with UT Southwestern Medical School in Dallas and UT Dallas. He collaborates with faculty in Bioengineering at UTA in the area Infrared, Near Infrared, and visible high speed imaging to be applied to medical imaging. Currently he is the PI for NSF REU Site: Undergraduate Research Experiences in Sensors and Applicationsis and manges this important research and education activity at UTA.

Publications

      Conference Proceeding 2006
      • InGaAs/InAlAs Multi-Quantum Well Light Modulator and Detector, P. G. Maloney, F. E. Koch, K. Alavi, J. Pellegrino, T. Hongsmatip, D. Carothers, M. Winn, Proceedings SPIE Optics East 1-4 October 2006.
        {Conference Proceeding} [Refereed/Juried]

      • Journal Article 2006
        •  “Study of cerebral blood volume and blood flow using integral equation theory”, Monica Allen, Jeffery Allen, Kambiz Alavi, Libertas Mathematica, vol. XXVI Pages: 109-117 2006.
          {Journal Article} [Refereed/Juried]

          Journal Article 2005
          • Effect of the modulation duty cycle on the amplitude of photoreflectance”Esam Al-Arfaj, R. Glosser, Kambiz Alavi, and E.A. Beam III, Can. J. Phys./Rev. Can. Phys. 83(10): 1029-1034 (2005).
            {Journal Article} [Refereed/Juried]

            Journal Article 2000
            • “Photocurrent Study of Low Temperature Grown GaAs”, N. Hozhabri, J. Montoya, and K. Alavi, J. Appl. Phys. vol. 87, no. 5, pp. 2353-2356, 1 March 2000.
              {Journal Article} [Refereed/Juried]

              Conference Proceeding 1998
              • “High Efficiency InGaP Power pHEMTs”, M.-Y Kao, M. N. Tutt, E. A. Beam III, W. R. Frensley, and K. Alavi, in Compound Semiconductor Power Transistors and State of the Art Program on Compound Semiconductors (SOPTAPOCS XXIX), The Electrochemical Society Proceedings Series vol. 98-12, pp. 131-138 (1998).
                {Conference Proceeding} [Refereed/Juried]

              • Journal Article 1998
                • “Guided-mode resonant effects in thin-film diffractive optics and their applications”, R. Magnusson, D. Shin, Z. S. Liu, S. Tibuleac, S. J. Kim, P. P. Young, D. Wawro, T. A. Maldonado, and K. Alavi in Optics and Optoelectronics, Vol. 1, pp 228-237 (1998). O. P. Nijhawan, A. K. Gupta, A. K. Musla, and Kehar Singh, Narosa Publishing House, New Dehli, London(Invited)
                  {Journal Article} [Refereed/Juried]

                  Journal Article 1997
                  • “Study of deposition dependent characteristics of gold on n-GaAs by photoreflectance spectroscopy,” Ali Badakhshan, Jeff L. England, P. Thompson, P. Cheung, C. H. Yang, Kambiz Alavi, J. Appl. Phys.,v 81 n 2, pp 910-916, Jan 15 1997.
                    {Journal Article} [Refereed/Juried]
                  • 1997
                    • “Energy relaxation of hot electrons in GaAs/AlGaAs superlattices measured by infrared differential spectroscopy”, W. Hilber, M. Helm, K. Alavi, and R. N. Pathak, Superlattices and Microstructures. vol. 21, no.1; pp. 85-90 (1997).
                      {Journal Article} [Refereed/Juried]

                      Conference Proceeding 1996
                      • “Magnetic Field Induced Metal-Insulator Transition in GaAs/AlGaAs Quantum Wells and Superlattices,” W. Hilber, M. Helm, W. Hauke, F. M. Peeters, K. Alavi, and R. N. Pathak, 11th Int. Conf. on Phys. Semicond. at High Magn. Fields, 1996-1999 (1995).  
                        {Conference Proceeding} [Refereed/Juried]
                      • 1996
                        • “A Monolithic GaAs Photovoltaic Device Array with a Self-Aligned Dielectric Isolation on Sidewall,” Young-Gi Kim, Alec Chen, Kambiz Alavi, and Tsay-Jiu Shieh, Inst. Phys. Conf. Ser. 145, 1129-1132(1996).
                          {Conference Proceeding} [Refereed/Juried]

                        • Journal Article 1996
                          • “Impurity Band and Magnetic-Field-Insulator Transition in a Doped GaAs/AlxGa1-xAs Superlattice,” W. Hilber, M. Helm, F. M. Peeters, K. Alavi, and R. N. Pathak, Phys. Rev. B vol. 53, no. 3, pp.6919-6922,15 March 1996.
                            {Journal Article} [Refereed/Juried]
                          • 1996
                            • “Vacancy-Type Defects in Molecular Beam Epitaxy Low Temperature Grown GaAs, a Positron Beam Lifetime Study,” J. Störmer, W. Triftshäuser, N. Hozhabri, and K. Alavi, Appl. Phys. Lett. vol. 69 no. 13, pp. 1867-1869(1996).  
                              {Journal Article} [Refereed/Juried]
                            • 1996
                              • “Hot Electron Power Loss in a Doped GaAs/AlGaAs Superlattice at Intermediate Temperature Studied by Infrared Differential Spectroscopy,” W. Hilber, M. Helm, F. M. Peeters, K. Alavi, and R. N. Pathak, Appl. Phys. Lett. vol. 69, no. 17, pp. 2528-2530, Oct. 21, 1996.
                                {Journal Article} [Refereed/Juried]

                                Book Chapter 1995
                                • “Molecular Beam Epitaxy,” Kambiz Alavi, in Handbook of Compound Semiconductors, Ch.4, pp. 84-169, P. H. Holloway and G. E. McGuire editors, Noyes Publications, Parkridge, NJ 1995.
                                  {Book Chapter} [Refereed/Juried]

                                • Journal Article 1995
                                  • "Infrared Measurements in Annealed Molecular Beam Epitaxy GaAs Grown at Low Temperature," N. Hozhabri, S.-H. Lee, and K. Alavi, Appl. Phys. Lett. vol. 66 no. 19, pp. 2546-2548, 8 May 1995.  Erratum: Appl. Phys. Lett. vo.67, no. 7, p. 1037, (1995).
                                    {Journal Article} [Refereed/Juried]
                                  • 1995
                                    • "Defects and Arsenic Distribution in low-temperature-grown GaAs,"  N. Hozhabri, A. R. Koymen, S. C. Sharma, and K. Alavi, Appl. Surf. Sci. vol. 85, pp. 311-314 (1995).
                                      {Journal Article} [Refereed/Juried]

                                      Conference Proceeding 1994
                                      • "Analysis of Harmonics, Compression, and Intermodulation Distortion in Quadratic Electro-optic Intensity Modulators, " Charles L. Goldsmith, Robert Magnusson, and Kambiz Alavi, IEEE MTT-S Digest  pp. 69-72, 1994.
                                        {Conference Proceeding} [Refereed/Juried]

                                      • Journal Article 1994
                                        • "Miniband Dispersion, Critical Points, and Impurity Bands in Superlattices: An Infrared Absorption Study," M. Helm, W. Hilber, T. Fromherz, F. M. Peeters, K. Alavi, and R. N. Pathak, Solid State Electron.. vol.37, no.4-6, pp.1277-80; April-June 1994.
                                          {Journal Article} [Refereed/Juried]
                                        • 1994
                                          • "Defects in Molecular Beam Epitaxial GaAs Grown at Low Temperatures," N. Hozhabri, S. C. Sharma, R. N. Pathak, and K. Alavi, J. Electron. Mat. vol. 23, no. 6, pp. 519-523, June 1994.
                                            {Journal Article} [Refereed/Juried]
                                          • 1994
                                            • "Correlation between arsenic percipitates and vacancy-type defects in low temperature-grown GaAs," N. Hozhabri, J. B. Bailey, A. R. Koymen, S. C. Sharma, and K. Alavi, J. Phys. Condens. Matter vol. 6, L455-L460 , Aug. 1, 1994.
                                              {Journal Article} [Refereed/Juried]

                                              Conference Proceeding 1993
                                              • "Chirped Superlattice Asymmetric MQW Electroabsorption Modulators Grown by MBE,"  R. N. Pathak, L. T. Wang, and K. Alavi, Conference on Lasers and Electro-Optics, pp. 374-5, 2-7 May 1993, Baltimore, MD. (CLEO '93).  
                                                {Conference Proceeding} [Refereed/Juried]
                                              • 1993
                                                • "Chirped Superlattice Asymmetric MQW Electroabsorption Modulators Grown by MBE,"  R. N. Pathak, L. T. Wang, and K. Alavi, Conference on Lasers and Electro-Optics, pp. 374-5, 2-7 May 1993, Baltimore, MD. (CLEO '93).  
                                                  {Conference Proceeding} [Refereed/Juried]

                                                • Journal Article 1993
                                                  • "Infrared Absorption in Superlattices: A Probe of the Miniband Dispersion and the Structure of the Impurity Band," M. Helm, W. Hilber, T. Fromherz, F. M. Peeters, K. Alavi, and R. N. Pathak, Phys. Rev. B vol. 48, no. 3, pp.1601-1605,15 July 1993.  
                                                    {Journal Article} [Refereed/Juried]
                                                  • 1993
                                                    • "Electroreflectance-Photoreflectance Technique for Studies of Built-in Electric Field in Layered Materials," M. Sydor, Ali Badakhshan, D. A. Dale, K. Alavi, and R. Pathak, Appl. Phys. Lett. vol. 63, no. 4, pp. 527-529, 26 July 1993.
                                                      {Journal Article} [Refereed/Juried]
                                                    • 1993
                                                      • "Photoreflectance Characterization of GaAs as a Function of Temperature, Carrier Concentration, and Near-Surface Electric Field," Ali Badakhshan, C. Durbin, R. Glosser, Kambiz Alavi, and R. Pathak, J. Vac. Sci. Technol. B vol. 11, no. 2, pp. 169-174, March/April 1993
                                                        {Journal Article} [Refereed/Juried]

                                                        Conference Proceeding 1992
                                                        • "Application of differential photoreflectance spectroscopy in selective modulation of a layer within multilayer device structures,"  A. Badakhshan, M. Sydor, K. Alavi, N. Teraguchi, and H. Morkoc, Proceedings of the SPIE vol. 1678, 1992: Spectroscopic Characterization Techniques for Semiconductor Technology IV. Somerset, NJ, USA, 25-26 March 1992.
                                                          {Conference Proceeding} [Refereed/Juried]
                                                        • 1992
                                                          • "Correlation between electric field, temperature and carrier concentration with respect to photoreflectance lineshape at the E1 transition of GaAs," A. Badakhshan, C. Durbin, R. Glosser, K. Alavi, S. Nicholas, D. Dale, and K. Capuder.  Proceedings of the SPIE vol. 1678, pp. 194-202, 1992: Spectroscopic Characterization Techniques for Semiconductor Technology IV. Somerset, NJ, 25-26 March 1992.
                                                            {Conference Proceeding} [Non-refereed/non-juried]

                                                          • Journal Article 1992
                                                            • "Monoenergetic positron beam, positron lifetime, and Hall-effect measurements in III-V epilayers grown at low temperatures by molecular beam epitaxy," N. Hozhabri, R. C. Hyer, S. C. Sharma, J. Y. Ma, R. N. Pathak, and K. Alavi, J. Vacuum Sci. Technol. B  vol. 10, no. 2, p.788-92 March-April 1992. 
                                                              {Journal Article} [Refereed/Juried]
                                                            • 1992
                                                              • "Photoelectrochemical depth profiling of molecular beam epitaxy grown group III-V heterostructures," C. Wei, K. Rajeshwar, K. Alavi, R. N. Pathak, and L. T. Wang, Appl. Phys. Lett. vol. 60, no. 11, p.1348-50, March 1992.
                                                                {Journal Article} [Refereed/Juried]
                                                              • 1992
                                                                • "Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE," R. J. Malik, N. Chand, J. Nagle, R. W. Ryan, K. Alavi, and A. Y. Cho, IEEE Electron Device Lett.  vol. EDL-13, no. 11, pp. 557-9, Nov. 1992.
                                                                  {Journal Article} [Refereed/Juried]

                                                                  Conference Paper 1991
                                                                  • Monoenergetic positron beam, positron lifetime, and Hall-effect measurements in III-V epilayers grown at low temperatures by molecular beam epitaxy," N. Hozhabri, R. C. Hyer, S. C. Sharma, J. Y. Ma, R. N. Pathak, and K. Alavi,  presented at the 11th Molecular-Beam Epitaxy Workshop. Austin, TX, 6-18 September 1991.
                                                                    {Conference Paper} [Refereed/Juried]

                                                                  • Conference Proceeding 1991
                                                                    • "Optical determination of electric field and carrier concentration in nanometric epitaxial GaAs by photoreflectance," A. Badakhshan, C. Durbin, R. Glosser, K. Alavi, S. Lambert, R. S. Sillmon, P. E. Thompson, K. Capuder, Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium Editor(s): Stringfellow, G.B. Bristol, UK: IOP, 1992. pp. 635-8  Conference: Seattle, WA, 9-12 September 1991.
                                                                      {Conference Proceeding} [Refereed/Juried]
                                                                    • 1991
                                                                      • "Temperature dependence of collector breakdown voltage and output conductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors," R. J.  Malik, A. Feygenson, D. Ritter, R. A. Hamm, M. B. Panish, J. Nagle, K. Alavi, and A .Y. Cho, International Electron Devices Meeting 1991. Technical Digest 1991. p.805-8, Washington, DC, 8-11 December 1991.
                                                                        {Conference Proceeding} [Refereed/Juried]

                                                                      • Journal Article 1991
                                                                        • "Carrier Concentration Determination by Photoreflectance at E1 in Thin Film, Highly Doped GaAs," Ali Badakhshan, R. Glosser, S. Lambert, Mark Anthony, R. S. Sillmon, P. E. Thompson, and Kambiz Alavi, Appl. Phys. Lett., vol. 59, no. 10, pp. 1218-20, Sept. 1991.
                                                                          {Journal Article} [Refereed/Juried]

                                                                          Conference Proceeding 1990
                                                                          • "Determination of Diode Parameters and Threshold Currents from I-V Measurements of InGaAsP/InP DFB DH Lasers," B. Kanack, K. Alavi, A. Appelbaum, and C. L. Jiang, Second International Conference on Indium Phosphoide and related Materials, pp. 255-259, April 23-25, 1990, Denver, CO.
                                                                            {Conference Proceeding} [Refereed/Juried]
                                                                          • 1990
                                                                            • "Molecular beam epitaxy for optoelectronic quantum well devices," K. Alavi, Midcon/90. Conference Record  pp. 400-3  Conference: Dallas, TX, 11-13 September 1990.
                                                                              {Conference Proceeding} [Non-refereed/non-juried]

                                                                            • Journal Article 1990
                                                                              • "Simple Batch Processing for Forming High-Reflective Mirrors of Short-Cavity AlGaAs/GaAs Lasers," CC. Shieh, J. Mantz, K. Alavi, and R. Engelmann, Photon. Technol. Lett. vol. 2, no. 3, pp. 159-161, March 1990.
                                                                                {Journal Article} [Refereed/Juried]

                                                                                Conference Paper 1989
                                                                                • "Optimum Electroabsorption as a compromise between Exciton Confinement and Line Width Broadening," IEEE/LEOS Topical Meeting on Quantum Wells for Optics and Optoelectronics, K. Jelley, R. Engelmann, K. Alavi, H. Lee, Salt Lake City, Utah, March 6-8, 1989.  Post deadline paper.
                                                                                  {Conference Paper} [Refereed/Juried]

                                                                                • Conference Proceeding 1989
                                                                                  • "Low Threshold Current Ridge Waveguide Etched Facet Short Cavity AlGaAs/GaAs Laser," C. Shieh, J. Mantz, K. Alavi, and R. Engelmann, presented at Conference on Lasers and Electro-Optics, 24-28 April 1989, Baltimore, MD. (CLEO '89).
                                                                                    {Conference Proceeding} [Refereed/Juried]
                                                                                  • 1989
                                                                                    • "The Effect of Ar Sputtering on the Disordering of AlGaAs Multiple Quantum Wells (MQW)," C. Shieh, C. Colvard, J. Mantz, K. Alavi, and R. Engelmann, Advances in Materials, Processing and Devices in III-V Compound Semiconductors /symposium, pp. 531-536, 1989.
                                                                                      {Conference Proceeding} [Refereed/Juried]

                                                                                    • Journal Article 1989
                                                                                      • "Bloch and localized electrons in semiconductor superlattices," M. Helm, W. Hilber, T. Fromherz, F. M. Peeters, K. Alavi, and R. N. Pathak, Semicon. Science and Technol. vol.9,no.11S, pp.1989-93; Nov. 1994.
                                                                                        {Journal Article} [Refereed/Juried]
                                                                                      • 1989
                                                                                        • "Excited States of the Light- and Heavy-Hole Free Excitons Observed in Photoreflectance," W. M. Theis, G. D. Sanders, C. E. Leak, D. C. Reynolds, Yia-Chung Chang, K. Alavi, C. Colvard, and I. Shidlovsky,  Phys. Rev. B vol. 39, no. 2, pp. 1442-1445, 15 January 1989.(Rapid Communications).
                                                                                          {Journal Article} [Refereed/Juried]
                                                                                        • 1989
                                                                                          • "Localization Dependent Thermalization of Excitons in GaAs/AlGaAs Quantum Wells," C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, and N. Nouri, Phys. Rev. B vol. 39, no. 5, pp. 3419-3422, 15 February 1989.(Rapid Communications).  
                                                                                            {Journal Article} [Refereed/Juried]
                                                                                          • 1989
                                                                                            • "Self-Aligned Index-Guided MQW Laser by Sulfur Diffusion Induced Disordering," C. Shieh, J. Mantz, R. Engelmann, and K. Alavi, Electron. Lett., vol. 25, no. 6, pp. 378-379, 16 March 1989.
                                                                                              {Journal Article} [Refereed/Juried]
                                                                                            • 1989
                                                                                              • "The Cavity Length Dependence of Threshold Current for Quantum Well Lasers, C. Shieh, R. Engelmann, J. Mantz, K. Alavi and C. Shu, Appl. Phys. Lett., vol. 54, no. 12, pp. 1089-1091, 20 March 1989.
                                                                                                {Journal Article} [Refereed/Juried]
                                                                                              • 1989
                                                                                                • "Well Size Related Limitations on Maximum Electroabsorption in GaAs/AlGaAs Multiple Quantum Well Structures," K. Jelley, R. Engelmann, K. Alavi, H. Lee, Appl. Phys. Lett., vol. 55, pp. 70-72, 3 July 1989.
                                                                                                  {Journal Article} [Refereed/Juried]
                                                                                                • 1989
                                                                                                  • "TE- to TM- Mode Conversion in a GaAs/AlGaAs Superlattice Wave Guide," T. Wolf, C.-L. Shieh, R. Engelmann, K. Alavi, and J. Mantz, Electron. Lett. vol. 25, no. 18, pp. 1221-1223, 31 August 1989.
                                                                                                    {Journal Article} [Refereed/Juried]
                                                                                                  • 1989
                                                                                                    • "Lateral Refractive Index Step in GaAs/AlGaAs Multiple Quantum Well Waveguides Fabricated by Impurity Induced Disordering," T. Wolf, C.-L. Shieh, R. Engelmann, K. Alavi, and J. Mantz, Appl. Phys. Lett. vol. 55, no. 14, pp. 1412-1414, 2 October 1989.
                                                                                                      {Journal Article} [Refereed/Juried]

                                                                                                      Conference Paper 1988
                                                                                                      • "The Effect of Ar Sputtering on the Disordering of AlGaAs Multiple Quantum Wells (MQW)," C. Shieh, C. Colvard, J. Mantz, K. Alavi, and R. Engelmann, Materials Research Society Fall Meeting, 28 Nov.-2 Dec. 1988. 
                                                                                                        {Conference Paper} [Refereed/Juried]

                                                                                                      • Conference Proceeding 1988
                                                                                                        • "Anomalous Exciton Temperatures in GaAs/A1GaAs Quantum Wells," C. Colvard, D. Bimberg, K. Alavi, C. Maierhofer, and N. Nouri, Gallium Arsenide and Related Compounds 1988.  Proceedings of the Fifteenth International Symposium, pp. 261-266, 1989 September 11-14, 1988, Atlanta, GA.
                                                                                                          {Conference Proceeding} [Refereed/Juried]

                                                                                                        • Journal Article 1988
                                                                                                          • "Study of Impurity Induced Disordering in AlGaAs/GaAs Multi-Quantum Well Structures by Photothermal Deflection Spectroscopy and Photoluminescence," C. Shieh, J. Mantz, C. Colvard, K. Alavi, and R. Engelmann, Z. Smith, and S. Wagner, Superlattices and Microstructures, vol. 4, no. 4/5, pp. 5977-602, 1988.
                                                                                                            {Journal Article} [Refereed/Juried]
                                                                                                          • 1988
                                                                                                            • "Well Resolved Higher Excited States of Light- and Heavy-Hole Free Excitons in a 225Å AlxGa1-xAs-GaAs Multi-Quantum Well Structure," D.C. Reynolds, K. K. Bajaj, C. Leak, G. Peters, W. Theis, P. Yu, K. Alavi, C. Colvard, and I. Shidlovsky, Phys. Rev. B, vol. 37, no. 6, pp. 3117-3119, February 15, 1988.  (Rapid Communications).
                                                                                                              {Journal Article} [Refereed/Juried]
                                                                                                            • 1988
                                                                                                              • "Low Threshold Current Surface Emitting AlGaAs/GaAs Laser with 45o Metallised Reflector," C. L. Shieh, J. Mantz, K. Alavi, and R. W. H. Engelmann, Electron. Lett., vol. 24, no. 6, pp. 343-344, 17 March 1988.
                                                                                                                {Journal Article} [Refereed/Juried]
                                                                                                              • 1988
                                                                                                                • "Photovoltaic Quantum Well Infrared Detector," K. W. Goossen, S. A. Lyon, and K. Alavi, Appl. Phys. Lett., vol. 52, no. 20, pp. 1701-1703, 16 May 1988.
                                                                                                                  {Journal Article} [Refereed/Juried]
                                                                                                                • 1988
                                                                                                                  • "Grating Enhancement of Quantum Well Detector Response," K. W. Goossen, S. A. Lyon, and K. Alavi, Appl. Phys. Lett., vol. 53, no. 12, pp. 1027-1029, 19 September 1988.
                                                                                                                    {Journal Article} [Refereed/Juried]
                                                                                                                  • 1988
                                                                                                                    • "Deconvolution of the Light- and Heavy-Hole Free Exciton Fine Structure in AlxGa1-xAs-GaAs Multi-Quantum Wells Using Photoluminescence Excitation Spectroscopy," D. C. Reynolds, K. K. Bajaj, G. Peters, D. Look, W. M. Theis, P. W. Yu, H. Morkoc, K. Alavi, C. Colvard, and I. Shidlovsky, Superlattices and Microstructures, vol. 4, no. 6, pp. 723-728 (1988).  
                                                                                                                      {Journal Article} [Refereed/Juried]
                                                                                                                    • 1988
                                                                                                                      • "Experimental Determination of Electroabsorption in GaAs/AlGaAs Multiple Quantum Well Structures as a Function of Well Width," K. W. Jelley, K. Alavi, and R. W. Engelmann, Electron. Lett., vol. 24, no. 25, pp. 1555-1557, 8 December 1988.
                                                                                                                        {Journal Article} [Refereed/Juried]

                                                                                                                        Conference Proceeding 1987
                                                                                                                        • "Study of Impurity Induced Disordering in AlGaAs/GaAs Multi-Quantum Well Structures by Photothermal Deflection Spectroscopy and Photoluminescence," C. Shieh, J. Mantz, C. Colvard, K. Alavi, and R. Engelmann, Z. Smith, and S. Wagner, presented at the Third International Conference on Superlattices, Microstructures, and Microdevices, Chicago, August 17-20, 1987.
                                                                                                                          {Conference Proceeding} [Refereed/Juried]

                                                                                                                        • Journal Article 1987
                                                                                                                          • "Conduction Band Offset Determination in GaAs-AlGaAs through Measurement of Infrared Internal Photoemission," K.W. Goossen, S. A. Lyon, and K. Alavi, Phys. Rev. B, vol. 36, no. 17, pp. 9370-9373, December 15, 1987.  (Rapid Communications).
                                                                                                                            {Journal Article} [Refereed/Juried]
                                                                                                                          • 1987
                                                                                                                            • "Near-Single Carrier-Type Multiplication in a Multiple Graded-Well Structure for a Solid-State Photomultiplier," Jeremy Allam, Federico Capasso, Kambiz Alavi, and Alfred Y. Cho  IEEE Electron Device Lett. EDL-8,pp. 4-6,  Jan.  1987.
                                                                                                                              {Journal Article} [Refereed/Juried]
                                                                                                                            • 1987
                                                                                                                              • "Experimental Determination of the Edge Depletion Width of the Two- Dimensional Electron Gas in GaAs/AlxGa1-xAs," K.K. Choi, D.C. Tsui, and K. Alavi, Appl. Phys. Lett., vol. 50, no. 2, pp. 110-112, January 12, 1987.
                                                                                                                                {Journal Article} [Refereed/Juried]
                                                                                                                              • 1987
                                                                                                                                • "Dephasing Time and One-Dimensional Localization of Two-Dimensional Electrons in GaAs/AlxGa1-xAs Heterostructures," K. K. Choi, D. C. Tsui, and K. Alavi, Phys. Rev. B. vol. 36, no. 14, pp. 7751-7754, 15 November 1987 (Rapid Communications).
                                                                                                                                  {Journal Article} [Refereed/Juried]
                                                                                                                                • 1987
                                                                                                                                  • "Experimental Search for Dynamic Current Oscillations in the Quantum Hall Effect," V.J. Goldman, S.E. Barrett, D.C. Tsui, and K. Alavi, Physics Lett. A., vol. 123, pp. 311-312, 17 August 1987.
                                                                                                                                    {Journal Article} [Refereed/Juried]
                                                                                                                                  • 1987
                                                                                                                                    • "Characteristics of Nonselective GaAs/AlGaAs Heterostructure Etching at Very Low Etch Rates," M. Schneider, C. Colvard, K. Alavi, and E. Kohn, Proceedings of SPIE Conference 797: Advanced Processing of Semiconductor Devices , Bay Point, FL, pp. 149-155, March 22-27, 1987.
                                                                                                                                      {Journal Article} [Refereed/Juried]
                                                                                                                                    • 1987
                                                                                                                                      • "Narrow Recess HEMT Technology," C. J. Wu, M. Schneider, K. Alavi, and E. Kohn, J. Electrochem. Soc., vol. 134, no. 10, pp. 2613-2616, October 1987.
                                                                                                                                        {Journal Article} [Refereed/Juried]
                                                                                                                                      • 1987
                                                                                                                                        • "Molecular Beam Epitaxial Growth of Graded Band-Gap Quaternary GaxAly In1-x-yAs Multilayer Heterostructures on InP: Application to a Novel Avalanche Photodiode with Ultrahigh Ionization Ratio," K. Alavi, A.Y. Cho, F. Capasso, and J. Allam, J. Vac. Sci. Technol. B5, no. 3, pp. 802-807, May/June 1987.
                                                                                                                                          {Journal Article} [Refereed/Juried]

                                                                                                                                          Conference Proceeding 1986
                                                                                                                                          • "Near-Single Carrier-Type Multiplication in a Multiple Graded-Well Structure for a Solid-State Photomultiplier," Jeremy Allam, Federico Capasso, Kambiz Alavi, and Alfred Y. Cho, presented by J. Allam at International Electron Device Meeting(IEDM86), Los Angeles, CA, December 1986 (pp. 614-617 of Technical Digest), recipient of Best Student Paper Award
                                                                                                                                            {Conference Proceeding} [Refereed/Juried]
                                                                                                                                          • 1986
                                                                                                                                            • "Impact Ionization Across the Band-Edge Discontinuity with Very Large Ionization Rate Ratio in a Superlattice with Graded Wells," J. Allam, F. Capasso, K. Alavi, and A.Y. Cho, Gallium Arsenide and Related Compounds 1986, Proceedings of the Thirteenth International Symposium, pp. 405-10 September 1986, Las Vegas, NV.
                                                                                                                                              {Conference Proceeding} [Refereed/Juried]

                                                                                                                                            • Journal Article 1986
                                                                                                                                              • "Metastability and Polarization Effects in a pn Heterojunction Device Due to Deep States," Michael Stavola, F. Capasso, J. C. Nabity, K. Alavi, and A. Y. Cho, Appl. Phys. Lett., vol. 48, no. 15, pp. 997-999, April 14, 1986.
                                                                                                                                                {Journal Article} [Refereed/Juried]

                                                                                                                                                Journal Article 1985
                                                                                                                                                • "Electric Field Dependent Cathodoluminescence of III-V Compound Heterostructures:  A New Interface Characterization Technique," N. Magnea, P. M. Petroff, F. Capasso, R. A. Logan, K. Alavi, and A.Y. Cho; Appl. Phys. Lett., vol. 46, no. 11, pp. 1074-1076, June 1, 1985.
                                                                                                                                                  {Journal Article} [Refereed/Juried]

                                                                                                                                                  Journal Article 1984
                                                                                                                                                  • "Impact Ionization Rates of Electrons and Holes in Al0.48Ga0.52As," F. Capasso, K. Mohammad, K. Alavi, A.Y. Cho, and P.W. Foy; Appl. Phys. Lett., vol. 46, no. 9, pp. 968-970, November 1, 1984.
                                                                                                                                                    {Journal Article} [Refereed/Juried]
                                                                                                                                                  • 1984
                                                                                                                                                    • "Interdigitated Al0.48In0.52As/Ga0.47In0.53As Photoconductive Detectors," C.Y. Chen, Y. M. Pang, K. Alavi, A.Y. Cho, P.A. Garbinski; Appl. Phys. Lett., vol. 44, no. 1, pp. 99-101, January 1, 1984.
                                                                                                                                                      {Journal Article} [Refereed/Juried]
                                                                                                                                                    • 1984
                                                                                                                                                      • Electro-absorption Al0.48In0.52As p-i-n Avalanche Photodiodes Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, A. L. Hutchinson; IEEE Electron Device Lett., vol. EDL-5, no. 1, pp. 16-17, January 1984.
                                                                                                                                                        {Journal Article} [Refereed/Juried]
                                                                                                                                                      • 1984
                                                                                                                                                        • "Performance of a Ga0.47In0.53As/Al0.48In0.52As Modulation-Doped Photoconductive Detector," C.Y. Chen, Y.M. Pang, A.Y. Cho, K. Alavi, P.A. Garbinski; Conference on Optical Fiber Communication.  Digest of Technical Papers, pp. 52-53, January 23-25, 1984, New Orleans, LA.
                                                                                                                                                          {Journal Article} [Refereed/Juried]
                                                                                                                                                        • 1984
                                                                                                                                                          • "New Low Dark Current, High Speed Al0.48In0.52As/Ga0.47In0.53As Avalanche Photodiode by Molecular Beam Epitaxy for Long Wavelength Fiber Optic Communications Systems," F. Capasso, B. Kasper, K. Alavi, A.Y. Cho, J.M. Parsey; Appl. Phys. Lett., vol. 44, no. 11, pp. 1027-1029, June 1, 1984.
                                                                                                                                                            {Journal Article} [Refereed/Juried]

                                                                                                                                                            Conference Proceeding 1983
                                                                                                                                                            • "Long Wavelength, Wide Spectral Response (0.8-1.8 μm) Al0.48In0.52As/Ga0.47In0.53As Avalanche Photodiodes and Al0.48In0.52As Electro-absorption pin Avalanche Detectors Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, P. W. Foy, C. G. Bethea,  International Electron Devices Meeting (IEDM) Technical Digest, pp. 468-471, December 5-7, 1983, Washington, DC.
                                                                                                                                                              {Conference Proceeding} [Refereed/Juried]
                                                                                                                                                            • 1983
                                                                                                                                                              • "Long Wavelength, Wide Spectral Response (0.8-1.8 ?m) Al0.48In0.52As/Ga0.47In0.53As Avalanche Photodiodes and Al0.48In0.52As Electro-absorption pin Avalanche Detectors Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, P. W. Foy, C. G. Bethea,  International Electron Devices Meeting (IEDM) Technical Digest, pp. 468-471, December 5-7, 1983, Washington, DC.
                                                                                                                                                                {Conference Proceeding} [Refereed/Juried]

                                                                                                                                                              • Journal Article 1983
                                                                                                                                                                • "High-Gain Al0.48In0.52As/Ga0.47In0.53As Vertical N-P-N Heterojunction Bipolar Transistors Grown by Molecular-Beam Epitaxy," R.J. Malik, J.R. Hayes, F. Capasso, K. Alavi, A.Y. Cho; IEEE Electron Device Lett., vol. EDL-4, no. 10, pp. 383-385, October 1983.
                                                                                                                                                                  {Journal Article} [Refereed/Juried]
                                                                                                                                                                • 1983
                                                                                                                                                                  • "New Long Wavelength Al0.48In0.52As/Ga0.47In0.53As  Avalanche Photodiode Grown by Molecular Beam Epitaxy," F. Capasso, K. Alavi, A. Y. Cho, P. W. Foy, C. G. Bethea; Appl. Phys. Lett., vol. 43, no. 11, pp. 1040-1042, December 1, 1983.
                                                                                                                                                                    {Journal Article} [Refereed/Juried]
                                                                                                                                                                  • 1983
                                                                                                                                                                    • "Selectively Doped Al0.48In0.52As/Ga0.47In0.53As Heterostructure Field Effect Transistor," T.P. Pearsall, R. Hendel, P. O'Connor, K. Alavi, A.Y. Cho; IEEE Electron Device Lett., vol. EDL-4, no. 1, pp. 5-8, January 1983.  
                                                                                                                                                                      {Journal Article} [Refereed/Juried]
                                                                                                                                                                    • 1983
                                                                                                                                                                      • "Optically Pumped 1.55 µm Double Heterostructure GaxAlyIn1-x-yAs/AluIn1-uAs Lasers Grown by Molecular Beam Epitaxy," K. Alavi, H. Temkin, W.R. Wagner, A.Y. Cho; Appl. Phys. Lett., vol. 42, no. 3, pp. 254-256, February 1, 1983.
                                                                                                                                                                        {Journal Article} [Refereed/Juried]
                                                                                                                                                                      • 1983
                                                                                                                                                                        • "Ga0.47In0.53As/Al0.48In0.52As Multiquantum-Well LEDs Emitting at 1.6 m," K. Alavi, T.P. Pearsall, S. R. Forrest, A.Y. Cho; Electron. Lett. vol. 19, no. 6, pp. 227-229, March 17, 1983.
                                                                                                                                                                          {Journal Article} [Refereed/Juried]
                                                                                                                                                                        • 1983
                                                                                                                                                                          • "1.5-1.6 µm Ga0.47In0.53As/Al0.48In0.52As Multiquantum Well Lasers Grown by Molecular Beam Epitaxy," H. Temkin, K. Alavi, W.R. Wagner, T.P. Pearsall, A.Y. Cho; Appl. Phys. Lett., vol. 42, no. 10, pp. 845-847, May 15, 1983.
                                                                                                                                                                            {Journal Article} [Refereed/Juried]
                                                                                                                                                                          • 1983
                                                                                                                                                                            • "Substrate Rotation-Induced Compositional Oscillation in Molecular Beam Epitaxy (MBE)," K. Alavi, P.M. Petroff, W. R. Wagner, A.Y. Cho; J. Vac. Sci. and Technol. B, vol. 1, no. 2, pp. 146-148, April-June 1983.
                                                                                                                                                                              {Journal Article} [Refereed/Juried]
                                                                                                                                                                            • 1983
                                                                                                                                                                              • "Measurement of the Conduction-Band Discontinuity of Molecular Beam Epitaxial Grown In0.52Al0.48As/In0.53Ga0.47As, N-n Heterojunction by C-V Profiling," R. People, K.W. Wecht, K. Alavi, A.Y. Cho; Appl. Phys. Lett., vol. 43, no. 1, pp. 118-120, July 1, 1983.  
                                                                                                                                                                                {Journal Article} [Refereed/Juried]
                                                                                                                                                                              • 1983
                                                                                                                                                                                • "Ion Implantation of Si and Be in Al0.48In0.52As," A.N.M. Masum Choudhury, W. Rowe, K. Tabatabaie-Alavi, C. G. Fonstad, K. Alavi, A.Y. Cho; J. Appl. Phys., vol. 54, no. 8, pp. 4374-4377, August 1983.
                                                                                                                                                                                  {Journal Article} [Refereed/Juried]
                                                                                                                                                                                • 1983
                                                                                                                                                                                  • "Modulation-Doped Ga0.47In0.53As/Al0.48In0.52As Planar Photoconductive Detectors for 1.0-1.55-µm Applications," C.Y. Chen, Y.M. Pang, P.A. Garbinski, A.Y. Cho, K. Alavi; Appl. Phys. Lett., vol. 43, no. 3, pp. 308-310, August 1, 1983.
                                                                                                                                                                                    {Journal Article} [Refereed/Juried]
                                                                                                                                                                                  • 1983
                                                                                                                                                                                    • "New Ga0.47In0.53As Sheet-Charge Field-Effect Transistor for Long- Wavelength Optoelectronic Integration," C.Y. Chen, K. Alavi, A.Y. Cho, P.A. Garbinski, Y.M. Pang; Electron. Lett., vol. 19, no. 19, pp. 791- 792, September 15, 1983.
                                                                                                                                                                                      {Journal Article} [Refereed/Juried]

                                                                                                                                                                                      Conference Proceeding 1982
                                                                                                                                                                                      • "(In,Ga)As/(In,Al)As Heterojunction Lateral PNP Transistors," K. Tabatabaie-Alavi, A.N.M.M. Choudhury, K. Alavi, J. Vlcek, N. Slater, C. G. Fonstad, A.Y. Cho; International Electron Devices Meeting Technical Digest (IEDM 1982) pp. 766-769, December 13-15, 1982, San Francisco, CA.  Presented by K. Tabatabaie Alavi.  Recipient of Best Student Paper Award.
                                                                                                                                                                                        {Conference Proceeding} [Refereed/Juried]
                                                                                                                                                                                      • 1982
                                                                                                                                                                                        • "Ion Implantation Doping of InGaAs and InAlAs," N. J. Slater, A.N.M.M. Choudhury, K. Tabatabaie-Alavi, W. Rowe, C. G. Fonstad, K. Alavi, and A.Y. Cho; Gallium Arsenide and Related Compounds, 1982, pp. 627-634, 1983.  Proceedings of the Tenth International Symposium on Gallium Arsenide and Related Compounds, 19-22 September 1982, Albuquerque NM.
                                                                                                                                                                                          {Conference Proceeding} [Refereed/Juried]

                                                                                                                                                                                        • Journal Article 1982
                                                                                                                                                                                          • "Short Channel Ga0.47In0.53As/Al0.48In0.52As Selectively Doped Field Effect Transistors," C.Y. Chen, A. Y. Cho, K. Alavi, P.A. Garbinski; IEEE Electron Device Lett., vol. EDL-3, no. 8, pp. 205-208, August 1982.
                                                                                                                                                                                            {Journal Article} [Refereed/Juried]
                                                                                                                                                                                          • 1982
                                                                                                                                                                                            • "Ion Implanted In0.53Ga0.47As/In0.52Al0.48As Lateral PNP Transistors," K. Tabatabaie-Alavi, A.N.M.M. Choudhury, K. Alavi, J. Vlcek, N. J. Slater, C. G. Fonstad, A.Y. Cho; IEEE Electron Device Lett., vol. EDL-3, no. 12, pp. 379-381, December 1982.
                                                                                                                                                                                              {Journal Article} [Refereed/Juried]
                                                                                                                                                                                            • 1982
                                                                                                                                                                                              • "In0.53Ga0.47As FETs with Insulator-Assisted Schottky Gates," P. O'Connor, T.P. Pearsall, K. Y. Cheng, A.Y. Cho, J. C. M. Hwang, K. Alavi; IEEE Electron Device Lett., vol. EDL-3, no. 3, pp. 64-66, March 1982.
                                                                                                                                                                                                {Journal Article} [Refereed/Juried]

                                                                                                                                                                                                Journal Article 1980
                                                                                                                                                                                                • "Interband Magneto-absorption of In0.53Ga0.47As," K. Alavi, R. L. Aggarwal, S. H. Groves; Phys. Rev. B, vol. 21, no. 3, pp. 1311-1315, February 1, 1980.
                                                                                                                                                                                                  {Journal Article} [Refereed/Juried]

                                                                                                                                                                                                  Journal Article 1979
                                                                                                                                                                                                  • “Oscillatory Magneto-Transmission of In1-xGaxAsyP1-y Alloys," K. Alavi, R. L. Aggarwal, S. H. Groves; J. Magn. and Magn. Mater. (Netherlands), vol. 11, no. 1-3, pp. 136-138, April 1979.
                                                                                                                                                                                                    {Journal Article} [Refereed/Juried]

Support & Funding

    • Apr 2012 to Mar 2015 REU Site: Undergraduate Research Experiences in Sensors and Applications sponsored by  - $338962
    • Sept 2009 to Aug 2011 Engineering Sustainable Engineers sponsored by  - $150000
    • Jan 2006 to Jan 2011 The University of Texas Multimodal Optical Medical Research Section of AIRC sponsored by  - $2232000

Courses

      • EE 5339-001 TOPICS IN ELECTROMAGNETICS
        Course Description: This course will introduce the fundamental principles of medical imaging, including the basic concepts of linear system theory, imaging operations, X-ray computed tomography (CT), magnetic resonance imaging (MRI), diffuse optical Ultrasound Imaging, and nuclear medicine imaging. The selected topics cover the physical principles of imaging modalities with the emphasis on how the image is computed.
        Spring - Regular Academic Session - 2011 Download Syllabus 1 Link
      • EE 4328-001 CURRENT TOPICS IN ELECTRICAL ENGINEERING
        Course Description: This course will introduce the fundamental principles of medical imaging, including the basic concepts of linear system theory, imaging operations, X-ray computed tomography (CT), magnetic resonance imaging (MRI), diffuse optical Ultrasound Imaging, and nuclear medicine imaging. The selected topics cover the physical principles of imaging modalities with the emphasis on how the image is computed.
        Spring - Regular Academic Session - 2011 Download Syllabus 1 Link
      • EE 2303-001 Electronics I
        EE 2303 ELECTRONICS I (3-3) Introduction to semiconductors, carrier statistics, drift and diffusion, semiconductor diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). Circuit applications of diodes. Direct Current (DC) biasing and stability of circuits containing diodes, BJTs, and FETs. Introduction to mid-band single stage small signal analysis of BJT and FET circuits. Laboratory experiments to complement concepts learned in class. Prerequisite: Grade C or better in both EE 2415 and MATH 2326.
        Spring - Regular Academic Session - 2011 Download Syllabus
      • EE 2303-001 Electronics I
        EE 2303 ELECTRONICS I (3-3) Introduction to semiconductors, carrier statistics, drift and diffusion, semiconductor diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). Circuit applications of diodes. Direct Current (DC) biasing and stability of circuits containing diodes, BJTs, and FETs. Introduction to mid-band single stage small signal analysis of BJT and FET circuits. Laboratory experiments to complement concepts learned in class. Prerequisite: Grade C or better in both EE 2415 and MATH 2326.
        Spring - Regular Academic Session - 2010 Download Syllabus

Other Service Activities

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    • Dec  OPTO ELECTRONICS RESEARCH GROUP